Direct evidence of chemically inhomogeneous, nanostructured, Si-O buried interfaces and their effect on the efficiency of carbon nanotube/Si photovoltaic heterojunctions

Handle URI:
http://hdl.handle.net/10754/577043
Title:
Direct evidence of chemically inhomogeneous, nanostructured, Si-O buried interfaces and their effect on the efficiency of carbon nanotube/Si photovoltaic heterojunctions
Authors:
Pintossi, Chiara; Salvinelli, Gabriele; Drera, Giovanni; Pagliara, Stefania; Sangaletti, L.; Del Gobbo, Silvano; Morbidoni, Maurizio; Scarselli, Manuela A.; De Crescenzi, Maurizio; Castrucci, Paola
Abstract:
An angle resolved X-ray photoemission study of carbon nanotube/silicon hybrid photovoltaic (PV) cells is reported, providing a direct probe of a chemically inhomogeneous, Si-O buried interface between the carbon nanotube (CNT) networked layer and the n-type Si substrate. By changing the photoelectron takeoff angle of the analyzer, a nondestructive in-depth profiling of a CNT/SiOx/SiO2/Si complex interface is achieved. Data are interpreted on the basis of an extensive modeling of the photoemission process from layered structures, which fully accounts for the depth distribution function of the photoemitted electrons. As X-ray photoemission spectroscopy provides direct access to the buried interface, the aging and the effects of chemical etching on the buried interface have been highlighted. This allowed us to show how the thickness and the composition of the buried interface can be related to the efficiency of the PV cell. The results clearly indicate that while SiO2 is related to an increase of the efficiency, acting as a buffer layer, SiOx is detrimental to cell performances, though it can be selectively removed by etching in HF vapors. © 2013 American Chemical Society.
KAUST Department:
Solar and Photovoltaic Engineering Research Center (SPERC)
Publisher:
American Chemical Society (ACS)
Journal:
The Journal of Physical Chemistry C
Issue Date:
12-Sep-2013
DOI:
10.1021/jp404820k
Type:
Article
ISSN:
19327447
Sponsors:
The Roma Tor Vergata group acknowledges the financial support of the European Office of Aerospace Research and Development (EOARD) through Air Force Office of Scientific Research Material Command, USAF, under Grant No. FA8655-11-1-3036.
Appears in Collections:
Articles; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorPintossi, Chiaraen
dc.contributor.authorSalvinelli, Gabrieleen
dc.contributor.authorDrera, Giovannien
dc.contributor.authorPagliara, Stefaniaen
dc.contributor.authorSangaletti, L.en
dc.contributor.authorDel Gobbo, Silvanoen
dc.contributor.authorMorbidoni, Maurizioen
dc.contributor.authorScarselli, Manuela A.en
dc.contributor.authorDe Crescenzi, Maurizioen
dc.contributor.authorCastrucci, Paolaen
dc.date.accessioned2015-09-10T09:27:23Zen
dc.date.available2015-09-10T09:27:23Zen
dc.date.issued2013-09-12en
dc.identifier.issn19327447en
dc.identifier.doi10.1021/jp404820ken
dc.identifier.urihttp://hdl.handle.net/10754/577043en
dc.description.abstractAn angle resolved X-ray photoemission study of carbon nanotube/silicon hybrid photovoltaic (PV) cells is reported, providing a direct probe of a chemically inhomogeneous, Si-O buried interface between the carbon nanotube (CNT) networked layer and the n-type Si substrate. By changing the photoelectron takeoff angle of the analyzer, a nondestructive in-depth profiling of a CNT/SiOx/SiO2/Si complex interface is achieved. Data are interpreted on the basis of an extensive modeling of the photoemission process from layered structures, which fully accounts for the depth distribution function of the photoemitted electrons. As X-ray photoemission spectroscopy provides direct access to the buried interface, the aging and the effects of chemical etching on the buried interface have been highlighted. This allowed us to show how the thickness and the composition of the buried interface can be related to the efficiency of the PV cell. The results clearly indicate that while SiO2 is related to an increase of the efficiency, acting as a buffer layer, SiOx is detrimental to cell performances, though it can be selectively removed by etching in HF vapors. © 2013 American Chemical Society.en
dc.description.sponsorshipThe Roma Tor Vergata group acknowledges the financial support of the European Office of Aerospace Research and Development (EOARD) through Air Force Office of Scientific Research Material Command, USAF, under Grant No. FA8655-11-1-3036.en
dc.publisherAmerican Chemical Society (ACS)en
dc.titleDirect evidence of chemically inhomogeneous, nanostructured, Si-O buried interfaces and their effect on the efficiency of carbon nanotube/Si photovoltaic heterojunctionsen
dc.typeArticleen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.identifier.journalThe Journal of Physical Chemistry Cen
dc.contributor.institutionInterdisciplinary Laboratories for Advanced Materials Physics (I-LAMP), Dipartimento di Matematica e Fisica, Università Cattolica Del Sacro Cuore, I-25121 Brescia, Italyen
dc.contributor.institutionUnità CNISM, Dipartimento di Fisica, Università di Roma Tor Vergata, I-00133 Roma, Italyen
kaust.authorDel Gobbo, Silvanoen
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