SiSn diodes: Theoretical analysis and experimental verification

Handle URI:
http://hdl.handle.net/10754/576462
Title:
SiSn diodes: Theoretical analysis and experimental verification
Authors:
Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Wehbe, Nimer; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
We report a theoretical analysis and experimental verification of change in band gap of silicon lattice due to the incorporation of tin (Sn). We formed SiSn ultra-thin film on the top surface of a 4 in. silicon wafer using thermal diffusion of Sn. We report a reduction of 0.1 V in the average built-in potential, and a reduction of 0.2 V in the average reverse bias breakdown voltage, as measured across the substrate. These reductions indicate that the band gap of the silicon lattice has been reduced due to the incorporation of Sn, as expected from the theoretical analysis. We report the experimentally calculated band gap of SiSn to be 1.11 ± 0.09 eV. This low-cost, CMOS compatible, and scalable process offers a unique opportunity to tune the band gap of silicon for specific applications.
KAUST Department:
Integrated Nanotechnology Lab; Imaging and Characterization Core Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
SiSn diodes: Theoretical analysis and experimental verification 2015, 107 (8):082111 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
24-Aug-2015
DOI:
10.1063/1.4929801
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/107/8/10.1063/1.4929801
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorWehbe, Nimeren
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-09-03T12:43:21Zen
dc.date.available2015-09-03T12:43:21Zen
dc.date.issued2015-08-24en
dc.identifier.citationSiSn diodes: Theoretical analysis and experimental verification 2015, 107 (8):082111 Applied Physics Lettersen
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4929801en
dc.identifier.urihttp://hdl.handle.net/10754/576462en
dc.description.abstractWe report a theoretical analysis and experimental verification of change in band gap of silicon lattice due to the incorporation of tin (Sn). We formed SiSn ultra-thin film on the top surface of a 4 in. silicon wafer using thermal diffusion of Sn. We report a reduction of 0.1 V in the average built-in potential, and a reduction of 0.2 V in the average reverse bias breakdown voltage, as measured across the substrate. These reductions indicate that the band gap of the silicon lattice has been reduced due to the incorporation of Sn, as expected from the theoretical analysis. We report the experimentally calculated band gap of SiSn to be 1.11 ± 0.09 eV. This low-cost, CMOS compatible, and scalable process offers a unique opportunity to tune the band gap of silicon for specific applications.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/107/8/10.1063/1.4929801en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleSiSn diodes: Theoretical analysis and experimental verificationen
dc.typeArticleen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentImaging and Characterization Core Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorHussain, Aftab M.en
kaust.authorHussain, Muhammad Mustafaen
kaust.authorWehbe, Nimeren
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