Stability and electronic properties of silicene on WSe2

Handle URI:
http://hdl.handle.net/10754/575913
Title:
Stability and electronic properties of silicene on WSe2
Authors:
Zhu, Jiajie ( 0000-0002-1930-7884 ) ; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Many semiconducting substrates, such as GaS and MgBr2, have been explored for silicene. However, large lattice mismatches, complicated control of terminal layers and small band gaps are critical limiting factors. First-principles results on the stability and electronic properties of silicene on WSe2 show that the energy barriers for lateral translation between the two subsystems are very small due to weak van der Waals interactions. For the same reason, the Dirac physics of silicene is preserved. It turns out that the induced band gap is sufficient to withstand thermal fluctuations. This journal is © The Royal Society of Chemistry 2015.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Computational Physics and Materials Science (CPMS)
Publisher:
Royal Society of Chemistry (RSC)
Journal:
J. Mater. Chem. C
Issue Date:
17-Mar-2015
DOI:
10.1039/c5tc00435g
Type:
Article
ISSN:
20507534
Sponsors:
Research reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST).
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Materials Science and Engineering Program; Computational Physics and Materials Science (CPMS); Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorZhu, Jiajieen
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2015-08-25T06:19:18Zen
dc.date.available2015-08-25T06:19:18Zen
dc.date.issued2015-03-17en
dc.identifier.issn20507534en
dc.identifier.doi10.1039/c5tc00435gen
dc.identifier.urihttp://hdl.handle.net/10754/575913en
dc.description.abstractMany semiconducting substrates, such as GaS and MgBr2, have been explored for silicene. However, large lattice mismatches, complicated control of terminal layers and small band gaps are critical limiting factors. First-principles results on the stability and electronic properties of silicene on WSe2 show that the energy barriers for lateral translation between the two subsystems are very small due to weak van der Waals interactions. For the same reason, the Dirac physics of silicene is preserved. It turns out that the induced band gap is sufficient to withstand thermal fluctuations. This journal is © The Royal Society of Chemistry 2015.en
dc.description.sponsorshipResearch reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST).en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.rightsThis article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence.en
dc.titleStability and electronic properties of silicene on WSe2en
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalJ. Mater. Chem. Cen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorZhu, Jiajieen
kaust.authorSchwingenschlögl, Udoen
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