The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN

Handle URI:
http://hdl.handle.net/10754/575801
Title:
The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN
Authors:
O'Donnell, Kevin Peter; Roqan, Iman S. ( 0000-0001-7442-4330 ) ; Wang, Ke; Lorenz, Katharina; Alves, Eduardo Jorge; Boćkowski, Michał X.
Abstract:
Several distinct luminescent centres form in GaN samples doped with Eu. One centre, Eu2, recently identified as the isolated, substitutional Eu impurity, EuGa, is dominant in ion-implanted samples annealed under very high pressures (1 GPa) of N2. According to structural determinations, such samples exhibit an essentially complete removal of lattice damage caused by the implantation process. A second centre, Eu1, probably comprising EuGa in association with an intrinsic lattice defect, produces a more complex emission spectrum. In addition there are several unidentified features in the 5D0 to 7F2 spectral region near 620 nm. We can readily distinguish Eu1 and Eu2 by their excitation spectra, in particular through their different sensitivities to above-gap and below-gap excitation. The present study extends recent work on photoluminescence/ excitation (PL/E) spectroscopy of Eu1 and Eu2 to arrive at an understanding of these mechanisms in terms of residual optically active defect concentrations. We also report further on the 'host-independent' excitation mechanism that is active in the case of a prominent minority centre. The relevance of this work to the operation of the red GaN:Eu light-emitting diode is discussed. © 2010 Elsevier B.V. All rights reserved.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Semiconductor and Material Spectroscopy (SMS) Laboratory
Publisher:
Elsevier BV
Journal:
Optical Materials
Conference/Event name:
Rare earth doped materials for optical based technologies Symposium K of the 2010 EMRS Spring Meeting
Issue Date:
May-2011
DOI:
10.1016/j.optmat.2010.07.002
Type:
Conference Paper
ISSN:
09253467
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorO'Donnell, Kevin Peteren
dc.contributor.authorRoqan, Iman S.en
dc.contributor.authorWang, Keen
dc.contributor.authorLorenz, Katharinaen
dc.contributor.authorAlves, Eduardo Jorgeen
dc.contributor.authorBoćkowski, Michał X.en
dc.date.accessioned2015-08-24T09:26:33Zen
dc.date.available2015-08-24T09:26:33Zen
dc.date.issued2011-05en
dc.identifier.issn09253467en
dc.identifier.doi10.1016/j.optmat.2010.07.002en
dc.identifier.urihttp://hdl.handle.net/10754/575801en
dc.description.abstractSeveral distinct luminescent centres form in GaN samples doped with Eu. One centre, Eu2, recently identified as the isolated, substitutional Eu impurity, EuGa, is dominant in ion-implanted samples annealed under very high pressures (1 GPa) of N2. According to structural determinations, such samples exhibit an essentially complete removal of lattice damage caused by the implantation process. A second centre, Eu1, probably comprising EuGa in association with an intrinsic lattice defect, produces a more complex emission spectrum. In addition there are several unidentified features in the 5D0 to 7F2 spectral region near 620 nm. We can readily distinguish Eu1 and Eu2 by their excitation spectra, in particular through their different sensitivities to above-gap and below-gap excitation. The present study extends recent work on photoluminescence/ excitation (PL/E) spectroscopy of Eu1 and Eu2 to arrive at an understanding of these mechanisms in terms of residual optically active defect concentrations. We also report further on the 'host-independent' excitation mechanism that is active in the case of a prominent minority centre. The relevance of this work to the operation of the red GaN:Eu light-emitting diode is discussed. © 2010 Elsevier B.V. All rights reserved.en
dc.publisherElsevier BVen
dc.subjectEuropiumen
dc.subjectExcitation mechanismen
dc.subjectGallium nitrideen
dc.subjectIon implantationen
dc.subjectPhotoluminescenceen
dc.titleThe photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaNen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentSemiconductor and Material Spectroscopy (SMS) Laboratoryen
dc.identifier.journalOptical Materialsen
dc.conference.nameRare earth doped materials for optical based technologies Symposium K of the 2010 EMRS Spring Meetingen
dc.contributor.institutionSUPA Department of Physics, University of Strathclyde, Glasgow, United Kingdomen
dc.contributor.institutionUnidade de Física e Aceleradores, Instituto Tecnológico e Nuclear, Estrada Nacional 10, 2686-953 Sacavém, Portugalen
dc.contributor.institutionInstitute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Polanden
dc.contributor.institutionNanishi-Arako Lab, Ritsumeiken Univ., Japanen
kaust.authorRoqan, Iman S.en
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