Optical gain and absorption of 420 nm InGaN-based laser diodes grown on m-plane GaN substrate

Handle URI:
http://hdl.handle.net/10754/575773
Title:
Optical gain and absorption of 420 nm InGaN-based laser diodes grown on m-plane GaN substrate
Authors:
Shen, Chao; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Janjua, Bilal ( 0000-0001-9974-9879 ) ; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Speck, James; Den Baars, Steven P.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
Segmented contact method was utilized to measure the gain and absorption spectra at below and above threshold for 420nm m-plane InGaN/GaN laser diode with a comparatively higher peak modal gain of 29.2 cm-1.
KAUST Department:
Photonics Laboratory; Materials Science and Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program
Publisher:
The Optical Society
Journal:
Asia Communications and Photonics Conference 2014
Conference/Event name:
Asia Communications and Photonics Conference 2014
Issue Date:
2014
DOI:
10.1364/acpc.2014.aw4a.1
Type:
Conference Paper
ISSN:
2162108X
ISBN:
9781557528520
Appears in Collections:
Conference Papers; Electrical Engineering Program; Electrical Engineering Program; Materials Science and Engineering Program; Materials Science and Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorShen, Chaoen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorJanjua, Bilalen
dc.contributor.authorAlyamani, Ahmed Y.en
dc.contributor.authorEl-Desouki, Munir M.en
dc.contributor.authorSpeck, Jamesen
dc.contributor.authorDen Baars, Steven P.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-08-24T09:25:48Zen
dc.date.available2015-08-24T09:25:48Zen
dc.date.issued2014en
dc.identifier.isbn9781557528520en
dc.identifier.issn2162108Xen
dc.identifier.doi10.1364/acpc.2014.aw4a.1en
dc.identifier.urihttp://hdl.handle.net/10754/575773en
dc.description.abstractSegmented contact method was utilized to measure the gain and absorption spectra at below and above threshold for 420nm m-plane InGaN/GaN laser diode with a comparatively higher peak modal gain of 29.2 cm-1.en
dc.publisherThe Optical Societyen
dc.titleOptical gain and absorption of 420 nm InGaN-based laser diodes grown on m-plane GaN substrateen
dc.typeConference Paperen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalAsia Communications and Photonics Conference 2014en
dc.conference.date11–14 November 2014en
dc.conference.nameAsia Communications and Photonics Conference 2014en
dc.conference.locationShanghai Chinaen
dc.contributor.institutionKing Abdulaziz City for Science and Technology (KACST)Riyadh, Saudi Arabiaen
dc.contributor.institutionMaterials Department, University of CaliforniaSanta Barbara, CA, United Statesen
kaust.authorShen, Chaoen
kaust.authorOoi, Boon S.en
kaust.authorNg, Tien Kheeen
kaust.authorJanjua, Bilalen
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