Nanoscale reduction of graphene oxide thin films and its characterization

Handle URI:
http://hdl.handle.net/10754/575655
Title:
Nanoscale reduction of graphene oxide thin films and its characterization
Authors:
Lorenzoni, M.; Giugni, Andrea; Di Fabrizio, Enzo M. ( 0000-0001-5886-4678 ) ; Pérez-Murano, Francesc; Mescola, A.; Torre, Bruno
Abstract:
In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material. © 2015 IOP Publishing Ltd.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Biological and Environmental Sciences and Engineering (BESE) Division; Materials Science and Engineering Program
Publisher:
IOP Publishing
Journal:
Nanotechnology
Issue Date:
29-Jun-2015
DOI:
10.1088/0957-4484/26/28/285301
Type:
Article
ISSN:
0957-4484; 1361-6528
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Biological and Environmental Sciences and Engineering (BESE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLorenzoni, M.en
dc.contributor.authorGiugni, Andreaen
dc.contributor.authorDi Fabrizio, Enzo M.en
dc.contributor.authorPérez-Murano, Francescen
dc.contributor.authorMescola, A.en
dc.contributor.authorTorre, Brunoen
dc.date.accessioned2015-08-24T08:35:08Zen
dc.date.available2015-08-24T08:35:08Zen
dc.date.issued2015-06-29en
dc.identifier.issn0957-4484en
dc.identifier.issn1361-6528en
dc.identifier.doi10.1088/0957-4484/26/28/285301en
dc.identifier.urihttp://hdl.handle.net/10754/575655en
dc.description.abstractIn this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material. © 2015 IOP Publishing Ltd.en
dc.publisherIOP Publishingen
dc.subjectconductive AFMen
dc.subjectGraphene oxideen
dc.subjectreduced graphene oxideen
dc.subjectscanning probeen
dc.titleNanoscale reduction of graphene oxide thin films and its characterizationen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentBiological and Environmental Sciences and Engineering (BESE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalNanotechnologyen
dc.contributor.institutionIMB-CNM (CSIC), Bellaterra, 08193, Catalonia, Spainen
dc.contributor.institutionNanophysics, Istituto Italiano di Tecnologia, via Morego, 30, I-16163 Genova, Italyen
dc.contributor.institutionPerformed AFM experimentsen
dc.contributor.institutionSupervised the work and performed the Raman characterizationen
kaust.authorGiugni, Andreaen
kaust.authorDi Fabrizio, Enzo M.en
kaust.authorTorre, Brunoen
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