Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

Handle URI:
http://hdl.handle.net/10754/575649
Title:
Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications
Authors:
Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Zidan, Mohammed A. ( 0000-0003-3843-814X ) ; Al-Nassar, Mohammed Y. ( 0000-0002-6478-6554 ) ; Hanna, Amir ( 0000-0003-4679-366X ) ; Kosel, Jürgen ( 0000-0002-8998-8275 ) ; Salama, Khaled N. ( 0000-0001-7742-1282 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol-gel coating cycles required (i.e., more cost-effective), and, fabrication wise, is more suitable for further scaling of lateral dimensions to the nano-scale due to the larger feature size-to-depth aspect ratio (critical for ultra-high density non-volatile memory applications). Utilizing the inverse proportionality between substrate's thickness and its flexibility, traditional PZT based FeRAM on silicon is transformed through a transfer-less manufacturable process into a flexible form that matches organic electronics' flexibility while preserving the superior performance of silicon CMOS electronics. Each memory cell in a FeRAM array consists of two main elements; a select/access transistor, and a storage ferroelectric capacitor. Flexible transistors on silicon have already been reported. In this work, we focus on the storage ferroelectric capacitors, and report, for the first time, its performance after transformation into a flexible version, and assess its key memory parameters while bent at 0.5 cm minimum bending radius.
KAUST Department:
Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Electrical Engineering Program; Sensing, Magnetism and Microsystems Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Electrical Engineering Program; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Electrical Engineering Program; Integrated Nanotechnology Lab
Publisher:
Wiley-Blackwell
Journal:
Advanced Electronic Materials
Issue Date:
24-Apr-2015
DOI:
10.1002/aelm.201500045
Type:
Article
ISSN:
2199-160X
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Sensing, Magnetism and Microsystems Lab; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorZidan, Mohammed A.en
dc.contributor.authorAl-Nassar, Mohammed Y.en
dc.contributor.authorHanna, Amiren
dc.contributor.authorKosel, Jürgenen
dc.contributor.authorSalama, Khaled N.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-24T08:35:00Zen
dc.date.available2015-08-24T08:35:00Zen
dc.date.issued2015-04-24en
dc.identifier.issn2199-160Xen
dc.identifier.doi10.1002/aelm.201500045en
dc.identifier.urihttp://hdl.handle.net/10754/575649en
dc.description.abstractA flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol-gel coating cycles required (i.e., more cost-effective), and, fabrication wise, is more suitable for further scaling of lateral dimensions to the nano-scale due to the larger feature size-to-depth aspect ratio (critical for ultra-high density non-volatile memory applications). Utilizing the inverse proportionality between substrate's thickness and its flexibility, traditional PZT based FeRAM on silicon is transformed through a transfer-less manufacturable process into a flexible form that matches organic electronics' flexibility while preserving the superior performance of silicon CMOS electronics. Each memory cell in a FeRAM array consists of two main elements; a select/access transistor, and a storage ferroelectric capacitor. Flexible transistors on silicon have already been reported. In this work, we focus on the storage ferroelectric capacitors, and report, for the first time, its performance after transformation into a flexible version, and assess its key memory parameters while bent at 0.5 cm minimum bending radius.en
dc.publisherWiley-Blackwellen
dc.titleThin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applicationsen
dc.typeArticleen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentSensing, Magnetism and Microsystems Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentSensors Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.identifier.journalAdvanced Electronic Materialsen
kaust.authorGhoneim, Mohamed T.en
kaust.authorKosel, Jürgenen
kaust.authorSalama, Khaled N.en
kaust.authorHussain, Muhammad Mustafaen
kaust.authorZidan, Mohammed A.en
kaust.authorAl-Nassar, Mohammed Y.en
kaust.authorHanna, Amiren
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