Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers

Handle URI:
http://hdl.handle.net/10754/575643
Title:
Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers
Authors:
Hota, Mrinal Kanti ( 0000-0003-4336-8051 ) ; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Wang, Qingxiao; Melnikov, Vasily; Mohammed, Omar F. ( 0000-0001-8500-1130 ) ; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
Reproducible low-voltage bipolar resistive switching is reported in bilayer structures of p-type SnO films. Specifically, a bilayer homojunction comprising SnOx (oxygen-rich) and SnOy (oxygen-deficient) in nanoscale cross-point (300 × 300 nm2) architecture with self-compliance effect is demonstrated. By using two layers of SnO film, a good memory performance is obtained as compared to the individual oxide films. The memory devices show resistance ratio of 103 between the high resistance and low resistance states, and this difference can be maintained for up to 180 cycles. The devices also show good retention characteristics, where no significant degradation is observed for more than 103 s. Different charge transport mechanisms are found in both resistance states, depending on the applied voltage range and its polarity. The resistive switching is shown to originate from the oxygen ion migration and subsequent formation/rupture of conducting filaments.
KAUST Department:
Core Labs; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Materials Science and Engineering Program; Functional Nanomaterials and Devices Research Group
Publisher:
Wiley-Blackwell
Journal:
Advanced Electronic Materials
Issue Date:
23-Feb-2015
DOI:
10.1002/aelm.201400035
Type:
Article
ISSN:
2199-160X
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorHota, Mrinal Kantien
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorWang, Qingxiaoen
dc.contributor.authorMelnikov, Vasilyen
dc.contributor.authorMohammed, Omar F.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-08-24T08:34:53Zen
dc.date.available2015-08-24T08:34:53Zen
dc.date.issued2015-02-23en
dc.identifier.issn2199-160Xen
dc.identifier.doi10.1002/aelm.201400035en
dc.identifier.urihttp://hdl.handle.net/10754/575643en
dc.description.abstractReproducible low-voltage bipolar resistive switching is reported in bilayer structures of p-type SnO films. Specifically, a bilayer homojunction comprising SnOx (oxygen-rich) and SnOy (oxygen-deficient) in nanoscale cross-point (300 × 300 nm2) architecture with self-compliance effect is demonstrated. By using two layers of SnO film, a good memory performance is obtained as compared to the individual oxide films. The memory devices show resistance ratio of 103 between the high resistance and low resistance states, and this difference can be maintained for up to 180 cycles. The devices also show good retention characteristics, where no significant degradation is observed for more than 103 s. Different charge transport mechanisms are found in both resistance states, depending on the applied voltage range and its polarity. The resistive switching is shown to originate from the oxygen ion migration and subsequent formation/rupture of conducting filaments.en
dc.publisherWiley-Blackwellen
dc.titleNanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayersen
dc.typeArticleen
dc.contributor.departmentCore Labsen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalAdvanced Electronic Materialsen
kaust.authorWang, Qingxiaoen
kaust.authorAlshareef, Husam N.en
kaust.authorHota, Mrinal Kantien
kaust.authorHedhili, Mohamed N.en
kaust.authorMelnikov, Vasilyen
kaust.authorMohammed, Omar F.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.