Highly flexible and robust N-doped SiC nanoneedle field emitters

Handle URI:
http://hdl.handle.net/10754/575637
Title:
Highly flexible and robust N-doped SiC nanoneedle field emitters
Authors:
Chen, Shanliang; Ying, Pengzhan; Wang, Lin; Wei, Guodong; Gao, Fengmei; Zheng, Jinju; Shang, Minhui; Yang, Zuobao; Yang, Weiyou; Wu, Tao ( 0000-0003-0845-4827 )
Abstract:
Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm-1, 1.55 V μm-1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. © 2015 Nature Publishing Group All rights reserved.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC); Laboratory of Nano Oxides for Sustainable Energy
Publisher:
Springer Nature
Journal:
NPG Asia Materials
Issue Date:
23-Jan-2015
DOI:
10.1038/am.2014.126
Type:
Article
ISSN:
18844049
Sponsors:
Research reported in this publication was financially supported by the 973 program (Grant no. 2012CB326407) and the National Natural Science Foundation of China (NSFC, Grant nos. 51372122 and 51372123). This work was also supported by the King Abdullah University of Science and Technology (KAUST).
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorChen, Shanliangen
dc.contributor.authorYing, Pengzhanen
dc.contributor.authorWang, Linen
dc.contributor.authorWei, Guodongen
dc.contributor.authorGao, Fengmeien
dc.contributor.authorZheng, Jinjuen
dc.contributor.authorShang, Minhuien
dc.contributor.authorYang, Zuobaoen
dc.contributor.authorYang, Weiyouen
dc.contributor.authorWu, Taoen
dc.date.accessioned2015-08-24T08:34:45Zen
dc.date.available2015-08-24T08:34:45Zen
dc.date.issued2015-01-23en
dc.identifier.issn18844049en
dc.identifier.doi10.1038/am.2014.126en
dc.identifier.urihttp://hdl.handle.net/10754/575637en
dc.description.abstractFlexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm-1, 1.55 V μm-1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. © 2015 Nature Publishing Group All rights reserved.en
dc.description.sponsorshipResearch reported in this publication was financially supported by the 973 program (Grant no. 2012CB326407) and the National Natural Science Foundation of China (NSFC, Grant nos. 51372122 and 51372123). This work was also supported by the King Abdullah University of Science and Technology (KAUST).en
dc.publisherSpringer Natureen
dc.titleHighly flexible and robust N-doped SiC nanoneedle field emittersen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.contributor.departmentLaboratory of Nano Oxides for Sustainable Energyen
dc.identifier.journalNPG Asia Materialsen
dc.contributor.institutionInstitute of Materials, Ningbo University of TechnologyNingbo, Chinaen
dc.contributor.institutionSchool of Material Science and Engineering, China University of Mining and TechnologyXuzhou, Chinaen
kaust.authorWu, Taoen
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