Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

Handle URI:
http://hdl.handle.net/10754/575621
Title:
Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer
Authors:
Al-Jawhari, Hala A.; Caraveo-Frescas, Jesus Alfonso; Hedhili, Mohamed N. ( 0000-0002-3624-036X )
Abstract:
The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors.
KAUST Department:
Materials Science and Engineering Program; Core Labs
Publisher:
Springer Nature
Journal:
Journal of Electronic Materials
Issue Date:
11-Nov-2014
DOI:
10.1007/s11664-014-3504-8
Type:
Article
ISSN:
03615235
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorAl-Jawhari, Hala A.en
dc.contributor.authorCaraveo-Frescas, Jesus Alfonsoen
dc.contributor.authorHedhili, Mohamed N.en
dc.date.accessioned2015-08-24T08:34:23Zen
dc.date.available2015-08-24T08:34:23Zen
dc.date.issued2014-11-11en
dc.identifier.issn03615235en
dc.identifier.doi10.1007/s11664-014-3504-8en
dc.identifier.urihttp://hdl.handle.net/10754/575621en
dc.description.abstractThe effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors.en
dc.publisherSpringer Natureen
dc.subjectcuprous oxideen
dc.subjectp-Type TFTsen
dc.subjecttin monoxideen
dc.subjecttransparent bilayer channelen
dc.titleControlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layeren
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentCore Labsen
dc.identifier.journalJournal of Electronic Materialsen
dc.contributor.institutionDepartment of Physics, King Abdulaziz UniversityJeddah, Saudi Arabiaen
kaust.authorHedhili, Mohamed N.en
kaust.authorCaraveo-Frescas, Jesus Alfonsoen
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