Direct Mismatch Characterization of femto-Farad Capacitors

Handle URI:
http://hdl.handle.net/10754/575242
Title:
Direct Mismatch Characterization of femto-Farad Capacitors
Authors:
Omran, Hesham ( 0000-0002-0117-7364 ) ; Elafandy, Rami T.; Arsalan, Muhammad; Salama, Khaled N. ( 0000-0001-7742-1282 )
Abstract:
Reducing the capacitance of programmable capacitor arrays, commonly used in analog integrated circuits, is necessary for low-energy applications. However, limited mismatch data is available for small capacitors. We report mismatch measurement for a 2fF poly-insulator-poly (PIP) capacitor, which is the smallest reported PIP capacitor to the best of the authors’ knowledge. Instead of using complicated custom onchip circuitry, direct mismatch measurement is demonstrated and verified using Monte Carlo Simulations and experimental measurements. Capacitive test structures composed of 9 􀀀 bit programmable capacitor arrays (PCAs) are implemented in a low-cost 0:35m CMOS process. Measured data is compared to mismatch of large PIP capacitors, theoretical models, and recently published data. Measurement results indicate an estimated average relative standard deviation of 0.43% for the 2fF unit capacitor, which is better than the reported mismatch of metal-oxide-metal (MOM) fringing capacitors implemented in an advanced 32nm CMOS process.
KAUST Department:
Electrical Engineering Program
Citation:
Direct Mismatch Characterization of femto-Farad Capacitors 2015:1 IEEE Transactions on Circuits and Systems II: Express Briefs
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Transactions on Circuits and Systems II: Express Briefs
Issue Date:
17-Aug-2015
DOI:
10.1109/TCSII.2015.2468919
Type:
Article
ISSN:
1549-7747; 1558-3791
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7206545
Appears in Collections:
Articles; Electrical Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorOmran, Heshamen
dc.contributor.authorElafandy, Rami T.en
dc.contributor.authorArsalan, Muhammaden
dc.contributor.authorSalama, Khaled N.en
dc.date.accessioned2015-08-19T12:28:10Zen
dc.date.available2015-08-19T12:28:10Zen
dc.date.issued2015-08-17en
dc.identifier.citationDirect Mismatch Characterization of femto-Farad Capacitors 2015:1 IEEE Transactions on Circuits and Systems II: Express Briefsen
dc.identifier.issn1549-7747en
dc.identifier.issn1558-3791en
dc.identifier.doi10.1109/TCSII.2015.2468919en
dc.identifier.urihttp://hdl.handle.net/10754/575242en
dc.description.abstractReducing the capacitance of programmable capacitor arrays, commonly used in analog integrated circuits, is necessary for low-energy applications. However, limited mismatch data is available for small capacitors. We report mismatch measurement for a 2fF poly-insulator-poly (PIP) capacitor, which is the smallest reported PIP capacitor to the best of the authors’ knowledge. Instead of using complicated custom onchip circuitry, direct mismatch measurement is demonstrated and verified using Monte Carlo Simulations and experimental measurements. Capacitive test structures composed of 9 􀀀 bit programmable capacitor arrays (PCAs) are implemented in a low-cost 0:35m CMOS process. Measured data is compared to mismatch of large PIP capacitors, theoretical models, and recently published data. Measurement results indicate an estimated average relative standard deviation of 0.43% for the 2fF unit capacitor, which is better than the reported mismatch of metal-oxide-metal (MOM) fringing capacitors implemented in an advanced 32nm CMOS process.en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7206545en
dc.rights(c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.en
dc.titleDirect Mismatch Characterization of femto-Farad Capacitorsen
dc.typeArticleen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalIEEE Transactions on Circuits and Systems II: Express Briefsen
dc.eprint.versionPost-printen
dc.contributor.institutionProduction Technology Division of the Expec Advanced Research Center (Expec ARC), Saudi Aramco, Dhahran 31311, Saudi Arabiaen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorOmran, Heshamen
kaust.authorElafandy, Rami T.en
kaust.authorSalama, Khaled N.en
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