Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

Handle URI:
http://hdl.handle.net/10754/567062
Title:
Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers
Authors:
Alhashim, Hala H. ( 0000-0002-8779-1743 ) ; Khan, Mohammed Zahed Mustafa ( 0000-0002-9734-5413 ) ; Majid, Mohammed Abdul ( 0000-0003-2224-8982 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm −1), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.
KAUST Department:
Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers 2015 Electronics Letters
Publisher:
Institution of Engineering and Technology (IET)
Journal:
Electronics Letters
Issue Date:
15-Aug-2015
DOI:
10.1049/el.2015.1803
Type:
Article
ISSN:
0013-5194; 1350-911X
Additional Links:
http://digital-library.theiet.org/content/journals/10.1049/el.2015.1803
Appears in Collections:
Articles; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorAlhashim, Hala H.en
dc.contributor.authorKhan, Mohammed Zahed Mustafaen
dc.contributor.authorMajid, Mohammed Abdulen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-08-17T07:43:38Zen
dc.date.available2015-08-17T07:43:38Zen
dc.date.issued2015-08-15en
dc.identifier.citationSub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers 2015 Electronics Lettersen
dc.identifier.issn0013-5194en
dc.identifier.issn1350-911Xen
dc.identifier.doi10.1049/el.2015.1803en
dc.identifier.urihttp://hdl.handle.net/10754/567062en
dc.description.abstractImpurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm −1), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.en
dc.language.isoenen
dc.publisherInstitution of Engineering and Technology (IET)en
dc.relation.urlhttp://digital-library.theiet.org/content/journals/10.1049/el.2015.1803en
dc.rightsThis is an open access article published by the IET under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0/)en
dc.titleSub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasersen
dc.typeArticleen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalElectronics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorAlhashim, Hala H.en
kaust.authorKhan, Mohammed Zahed Mustafaen
kaust.authorOoi, Boon S.en
kaust.authorNg, Tien Kheeen
kaust.authorMajid, Mohammed Abdulen
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