Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices

Handle URI:
http://hdl.handle.net/10754/566089
Title:
Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices
Authors:
Wang, Hong; Du, Yuanmin; Li, Yingtao; Zhu, Bowen; Leow, Wan Ru; Li, Yuangang; Pan, Jisheng; Wu, Tao ( 0000-0003-0845-4827 ) ; Chen, Xiaodong
Abstract:
The employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated. The RS type of the devices can be effectively and exactly controlled by controlling the compliance current in the set process. Memory RS can be triggered by a higher compliance current, while threshold RS can be triggered by a lower compliance current. Furthermore, two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect. The results suggest that silk protein possesses the potential for sustainable electronics and data storage. In addition, this finding would provide important guidelines for the performance optimization of biomaterials based memory devices and the study of the underlying mechanism behind the RS effect arising from biomaterials. Resistive switching (RS) devices with configurable functionality based on protein are successfully achieved. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC); Laboratory of Nano Oxides for Sustainable Energy
Publisher:
Wiley
Journal:
Advanced Functional Materials
Issue Date:
May-2015
DOI:
10.1002/adfm.201501389; 10.1002/adfm.201570172
Type:
Article
ISSN:
1616301X
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorWang, Hongen
dc.contributor.authorDu, Yuanminen
dc.contributor.authorLi, Yingtaoen
dc.contributor.authorZhu, Bowenen
dc.contributor.authorLeow, Wan Ruen
dc.contributor.authorLi, Yuangangen
dc.contributor.authorPan, Jishengen
dc.contributor.authorWu, Taoen
dc.contributor.authorChen, Xiaodongen
dc.date.accessioned2015-08-12T09:27:49Zen
dc.date.available2015-08-12T09:27:49Zen
dc.date.issued2015-05en
dc.identifier.issn1616301Xen
dc.identifier.doi10.1002/adfm.201501389en
dc.identifier.doi10.1002/adfm.201570172en
dc.identifier.urihttp://hdl.handle.net/10754/566089en
dc.description.abstractThe employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated. The RS type of the devices can be effectively and exactly controlled by controlling the compliance current in the set process. Memory RS can be triggered by a higher compliance current, while threshold RS can be triggered by a lower compliance current. Furthermore, two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect. The results suggest that silk protein possesses the potential for sustainable electronics and data storage. In addition, this finding would provide important guidelines for the performance optimization of biomaterials based memory devices and the study of the underlying mechanism behind the RS effect arising from biomaterials. Resistive switching (RS) devices with configurable functionality based on protein are successfully achieved. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.publisherWileyen
dc.subjectElectronic devicesen
dc.subjectMemoryen
dc.subjectProteinsen
dc.subjectResistive switchingen
dc.subjectThresholden
dc.titleConfigurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devicesen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.contributor.departmentLaboratory of Nano Oxides for Sustainable Energyen
dc.identifier.journalAdvanced Functional Materialsen
kaust.authorDu, Yuanminen
kaust.authorWu, Taoen
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