Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

Handle URI:
http://hdl.handle.net/10754/565986
Title:
Impurity diffusion, point defect engineering, and surface/interface passivation in germanium
Authors:
Chroneos, Alexander I.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Dimoulas, Athanasios Dimoulas
Abstract:
In recent years germanium has been emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study is to review investigations of the diffusion of technologically important p- and n-type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium is interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering are discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Publisher:
Wiley-Blackwell
Journal:
Annalen der Physik
Issue Date:
26-Jan-2012
DOI:
10.1002/andp.201100246
Type:
Article
ISSN:
00033804
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorChroneos, Alexander I.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorDimoulas, Athanasios Dimoulasen
dc.date.accessioned2015-08-12T08:58:14Zen
dc.date.available2015-08-12T08:58:14Zen
dc.date.issued2012-01-26en
dc.identifier.issn00033804en
dc.identifier.doi10.1002/andp.201100246en
dc.identifier.urihttp://hdl.handle.net/10754/565986en
dc.description.abstractIn recent years germanium has been emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study is to review investigations of the diffusion of technologically important p- and n-type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium is interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering are discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.publisherWiley-Blackwellen
dc.subjectdefect engineering.en
dc.subjectdiffusionen
dc.subjectdopanten
dc.subjectGermaniumen
dc.subjectsurface passivationen
dc.titleImpurity diffusion, point defect engineering, and surface/interface passivation in germaniumen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalAnnalen der Physiken
dc.contributor.institutionMBE Laboratory, Institute of Materials Science, NCSR Demokritos, 15310 Athens, Greeceen
kaust.authorSchwingenschlögl, Udoen
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