Chemical exfoliation and optical characterization of threading-dislocation-free gallium-nitride ultrathin nanomembranes

Handle URI:
http://hdl.handle.net/10754/565838
Title:
Chemical exfoliation and optical characterization of threading-dislocation-free gallium-nitride ultrathin nanomembranes
Authors:
Elafandy, Rami T.; Mohammed, Abdul Majid ( 0000-0003-2224-8982 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Zhao, Lan; Cha, Dong Kyu; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
Semiconductor nanostructures have generated tremendous scientific interests as well as practical applications stemming from the engineering of low dimensional physics phenomena. Unlike 0D and 1D nanostructures, such as quantum dots and nanowires, respectively, 2D structures, such as nanomembranes, are unrivalled in their scalability for high yield manufacture and are less challenging in handling with the current transfer techniques. Furthermore, due to their planar geometry, nanomembranes are compatible with the current complementary metal oxide semiconductor (CMOS) technology. Due to these superior characteristics, there are currently different techniques in exfoliating nanomembranes with different crystallinities, thicknesses and compositions. In this work we demonstrate a new facile technique of exfoliating gallium nitride (GaN) nanomembranes with novel features, namely with the non-radiative cores of their threading-dislocations (TDs) being etched away. The exfoliation process is based on engineering the gallium vacancy (VGa) density during the GaN epitaxial growth with subsequent preferential etching. Based on scanning and transmission electron microscopies, as well as micro-photoluminescence measurements, a model is proposed to uncover the physical processes underlying the formation of the nanomembranes. Raman measurements are also performed to reveal the internal strain within the nanomembranes. After transferring these freely suspended 25 nm thin GaN nanomembranes to other substrates, we demonstrate the temperature dependence of their bandgap by photoluminescence technique, in order to shed light on the internal carrier dynamics. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
KAUST Department:
Photonics Laboratory; Imaging and Characterization Core Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Rami T. ElAfandy ; Mohammed A. Majid ; Tien Khee Ng ; Lan Zhao ; Dongkyu Cha and Boon S. Ooi " Chemical exfoliation and optical characterization of threading-dislocation-free gallium-nitride ultrathin nanomembranes ", Proc. SPIE 9277, Nanophotonics and Micro/Nano Optics II, 927719 (November 13, 2014); doi:10.1117/12.2071471; http://dx.doi.org/10.1117/12.2071471
Publisher:
SPIE-Intl Soc Optical Eng
Journal:
Nanophotonics and Micro/Nano Optics II
Conference/Event name:
Nanophotonics and Micro/Nano Optics II
Issue Date:
13-Nov-2014
DOI:
10.1117/12.2071471
Type:
Conference Paper
Additional Links:
http://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.2071471
Appears in Collections:
Conference Papers; Advanced Nanofabrication, Imaging and Characterization Core Lab; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorElafandy, Rami T.en
dc.contributor.authorMohammed, Abdul Majiden
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorZhao, Lanen
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-08-11T11:35:28Zen
dc.date.available2015-08-11T11:35:28Zen
dc.date.issued2014-11-13en
dc.identifier.citationRami T. ElAfandy ; Mohammed A. Majid ; Tien Khee Ng ; Lan Zhao ; Dongkyu Cha and Boon S. Ooi " Chemical exfoliation and optical characterization of threading-dislocation-free gallium-nitride ultrathin nanomembranes ", Proc. SPIE 9277, Nanophotonics and Micro/Nano Optics II, 927719 (November 13, 2014); doi:10.1117/12.2071471; http://dx.doi.org/10.1117/12.2071471en
dc.identifier.doi10.1117/12.2071471en
dc.identifier.urihttp://hdl.handle.net/10754/565838en
dc.description.abstractSemiconductor nanostructures have generated tremendous scientific interests as well as practical applications stemming from the engineering of low dimensional physics phenomena. Unlike 0D and 1D nanostructures, such as quantum dots and nanowires, respectively, 2D structures, such as nanomembranes, are unrivalled in their scalability for high yield manufacture and are less challenging in handling with the current transfer techniques. Furthermore, due to their planar geometry, nanomembranes are compatible with the current complementary metal oxide semiconductor (CMOS) technology. Due to these superior characteristics, there are currently different techniques in exfoliating nanomembranes with different crystallinities, thicknesses and compositions. In this work we demonstrate a new facile technique of exfoliating gallium nitride (GaN) nanomembranes with novel features, namely with the non-radiative cores of their threading-dislocations (TDs) being etched away. The exfoliation process is based on engineering the gallium vacancy (VGa) density during the GaN epitaxial growth with subsequent preferential etching. Based on scanning and transmission electron microscopies, as well as micro-photoluminescence measurements, a model is proposed to uncover the physical processes underlying the formation of the nanomembranes. Raman measurements are also performed to reveal the internal strain within the nanomembranes. After transferring these freely suspended 25 nm thin GaN nanomembranes to other substrates, we demonstrate the temperature dependence of their bandgap by photoluminescence technique, in order to shed light on the internal carrier dynamics. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.en
dc.language.isoenen
dc.publisherSPIE-Intl Soc Optical Engen
dc.relation.urlhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.2071471en
dc.rightsArchived with thanks to Proceedings of SPIEen
dc.titleChemical exfoliation and optical characterization of threading-dislocation-free gallium-nitride ultrathin nanomembranesen
dc.typeConference Paperen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentImaging and Characterization Core Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalNanophotonics and Micro/Nano Optics IIen
dc.conference.date2014-10-09 to 2014-10-11en
dc.conference.nameNanophotonics and Micro/Nano Optics IIen
dc.conference.locationBeijing, CHNen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorNg, Tien Kheeen
kaust.authorCha, Dong Kyuen
kaust.authorElafandy, Rami T.en
kaust.authorMajid, Mohammed A.en
kaust.authorZhao, Lanen
kaust.authorOoi, Boon S.en
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