Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

Handle URI:
http://hdl.handle.net/10754/565819
Title:
Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric
Authors:
Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ∼260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures.
KAUST Department:
Integrated Nanotechnology Lab; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric 2015, 107 (5):052904 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
5-Aug-2015
DOI:
10.1063/1.4927913
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/107/5/10.1063/1.4927913
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-11T10:12:39Zen
dc.date.available2015-08-11T10:12:39Zen
dc.date.issued2015-08-05en
dc.identifier.citationStudy of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric 2015, 107 (5):052904 Applied Physics Lettersen
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4927913en
dc.identifier.urihttp://hdl.handle.net/10754/565819en
dc.description.abstractFlexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ∼260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/107/5/10.1063/1.4927913en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleStudy of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabricen
dc.typeArticleen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorHussain, Muhammad Mustafaen
kaust.authorGhoneim, Mohamed T.en
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