Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Handle URI:
http://hdl.handle.net/10754/565817
Title:
Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures
Authors:
Lin, Yu-Chuan ( 0000-0003-4958-5073 ) ; Ghosh, Ram Krishna; Addou, Rafik; Lu, Ning; Eichfeld, Sarah M.; Zhu, Hui; Li, Ming-Yang; Peng, Xin; Kim, Moon J.; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Wallace, Robert M.; Datta, Suman; Robinson, Joshua A.
Abstract:
Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures 2015, 6:7311 Nature Communications
Publisher:
Nature Publishing Group
Journal:
Nature Communications
Issue Date:
19-Jun-2015
DOI:
10.1038/ncomms8311
Type:
Article
ISSN:
2041-1723
Additional Links:
http://www.nature.com/doifinder/10.1038/ncomms8311
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLin, Yu-Chuanen
dc.contributor.authorGhosh, Ram Krishnaen
dc.contributor.authorAddou, Rafiken
dc.contributor.authorLu, Ningen
dc.contributor.authorEichfeld, Sarah M.en
dc.contributor.authorZhu, Huien
dc.contributor.authorLi, Ming-Yangen
dc.contributor.authorPeng, Xinen
dc.contributor.authorKim, Moon J.en
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorWallace, Robert M.en
dc.contributor.authorDatta, Sumanen
dc.contributor.authorRobinson, Joshua A.en
dc.date.accessioned2015-08-11T10:09:53Zen
dc.date.available2015-08-11T10:09:53Zen
dc.date.issued2015-06-19en
dc.identifier.citationAtomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures 2015, 6:7311 Nature Communicationsen
dc.identifier.issn2041-1723en
dc.identifier.doi10.1038/ncomms8311en
dc.identifier.urihttp://hdl.handle.net/10754/565817en
dc.description.abstractVertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.en
dc.language.isoenen
dc.publisherNature Publishing Groupen
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/ncomms8311en
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.titleAtomically thin resonant tunnel diodes built from synthetic van der Waals heterostructuresen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNature Communicationsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials Science and Engineering and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, USAen
dc.contributor.institutionDepartment of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USAen
dc.contributor.institutionDepartment of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USAen
dc.contributor.institutionInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwanen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorLi, Lain-Jongen
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