Intermixing effects on emission properties of InGaN/GaN coupled Quantum wells

Handle URI:
http://hdl.handle.net/10754/565019
Title:
Intermixing effects on emission properties of InGaN/GaN coupled Quantum wells
Authors:
Susilo, Tri B.; Alsunaidi, M. A.; Shen, Chao; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
Intermixing processes in quantum wells have been extensively studied in order to modify characteristic of semiconductor devices such as LEDs. Controlling the band gap of material by introducing intermixing process can be used to enable broadband and controllable emission of LEDs. Quantum well intermixing (QWI) in InGaN/GaN double quantum well (DQW) is discussed in this paper. By varying the interdiffusion and separation lengths, the effects of intermixing process on the quantum eigen energies of the wells are studied. The investigation is carried out using a homegrown Quantum-FDTD simulator. © 2015 IEEE.
KAUST Department:
Electrical Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Materials Science and Engineering Program
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2015 IEEE 8th GCC Conference & Exhibition
Conference/Event name:
2015 IEEE 8th GCC Conference and Exhibition, GCCCE 2015
Issue Date:
Feb-2015
DOI:
10.1109/IEEEGCC.2015.7060090
Type:
Conference Paper
ISBN:
9781479984220
Appears in Collections:
Conference Papers; Electrical Engineering Program; Materials Science and Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSusilo, Tri B.en
dc.contributor.authorAlsunaidi, M. A.en
dc.contributor.authorShen, Chaoen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-08-04T07:28:24Zen
dc.date.available2015-08-04T07:28:24Zen
dc.date.issued2015-02en
dc.identifier.isbn9781479984220en
dc.identifier.doi10.1109/IEEEGCC.2015.7060090en
dc.identifier.urihttp://hdl.handle.net/10754/565019en
dc.description.abstractIntermixing processes in quantum wells have been extensively studied in order to modify characteristic of semiconductor devices such as LEDs. Controlling the band gap of material by introducing intermixing process can be used to enable broadband and controllable emission of LEDs. Quantum well intermixing (QWI) in InGaN/GaN double quantum well (DQW) is discussed in this paper. By varying the interdiffusion and separation lengths, the effects of intermixing process on the quantum eigen energies of the wells are studied. The investigation is carried out using a homegrown Quantum-FDTD simulator. © 2015 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectInterdiffusionen
dc.subjectLEDsen
dc.subjectQFDTDen
dc.subjectQuantum Well Intermixing (QWI)en
dc.titleIntermixing effects on emission properties of InGaN/GaN coupled Quantum wellsen
dc.typeConference Paperen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journal2015 IEEE 8th GCC Conference & Exhibitionen
dc.conference.date1 February 2015 through 4 February 2015en
dc.conference.name2015 IEEE 8th GCC Conference and Exhibition, GCCCE 2015en
dc.contributor.institutionNanophotonics and Plasmonics Research, Department of Electrical Engineering, King Fahd University of Petroleum and MineralsDhahran, Saudi Arabiaen
kaust.authorShen, Chaoen
kaust.authorOoi, Boon S.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.