Extending quantum efficiency roll-over threshold with compositionally graded InGaN/GaN LED

Handle URI:
http://hdl.handle.net/10754/565008
Title:
Extending quantum efficiency roll-over threshold with compositionally graded InGaN/GaN LED
Authors:
Mishra, Pawan ( 0000-0001-9764-6016 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Janjua, Bilal ( 0000-0001-9974-9879 ) ; Shen, Chao; Eid, Jessica; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We report a significant improvement in the electrical characteristic of compositionally graded InGaN/GaN multiple-quantum-well (MQWs) micro-LED. The efficiency droop in this device occurred at ∼20 times higher injection levels (∼275 A/cm2) compared to a conventional step-MQWs microLED (∼14 A/cm2).
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; KAUST Solar Center (KSC); Physical Sciences and Engineering (PSE) Division; Photonics Laboratory; Materials Science and Engineering Program
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2014 IEEE Photonics Conference
Conference/Event name:
27th IEEE Photonics Conference, IPC 2014
Issue Date:
Dec-2014
DOI:
10.1109/IPCon.2014.6994970
Type:
Conference Paper
ISBN:
9781457715044
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Materials Science and Engineering Program; Photonics Laboratory; KAUST Solar Center (KSC); Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorMishra, Pawanen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorJanjua, Bilalen
dc.contributor.authorShen, Chaoen
dc.contributor.authorEid, Jessicaen
dc.contributor.authorAlyamani, Ahmed Y.en
dc.contributor.authorEl-Desouki, Munir M.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-08-04T07:28:03Zen
dc.date.available2015-08-04T07:28:03Zen
dc.date.issued2014-12en
dc.identifier.isbn9781457715044en
dc.identifier.doi10.1109/IPCon.2014.6994970en
dc.identifier.urihttp://hdl.handle.net/10754/565008en
dc.description.abstractWe report a significant improvement in the electrical characteristic of compositionally graded InGaN/GaN multiple-quantum-well (MQWs) micro-LED. The efficiency droop in this device occurred at ∼20 times higher injection levels (∼275 A/cm2) compared to a conventional step-MQWs microLED (∼14 A/cm2).en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectCompositional gradingen
dc.subjectEfficiency droopen
dc.subjectInGaN/GaN MQWsen
dc.subjectLight emitting diodeen
dc.titleExtending quantum efficiency roll-over threshold with compositionally graded InGaN/GaN LEDen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentKAUST Solar Center (KSC)en
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journal2014 IEEE Photonics Conferenceen
dc.conference.date12 October 2014 through 16 October 2014en
dc.conference.name27th IEEE Photonics Conference, IPC 2014en
dc.contributor.institutionKing Abdulaziz City for Science and Technology (KACST)Riyadh, Saudi Arabiaen
kaust.authorNg, Tien Kheeen
kaust.authorShen, Chaoen
kaust.authorEid, Jessicaen
kaust.authorOoi, Boon S.en
kaust.authorMishra, Pawanen
kaust.authorJanjua, Bilalen
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