CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

Handle URI:
http://hdl.handle.net/10754/564973
Title:
CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric
Authors:
Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Hanna, Amir ( 0000-0003-4679-366X ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.
KAUST Department:
Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Materials Science and Engineering Program
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
14th IEEE International Conference on Nanotechnology
Conference/Event name:
2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014
Issue Date:
Aug-2014
DOI:
10.1109/NANO.2014.6967961
Type:
Conference Paper
ISBN:
9781479956227
Appears in Collections:
Conference Papers; Electrical Engineering Program; Materials Science and Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorHanna, Amiren
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-04T07:26:44Zen
dc.date.available2015-08-04T07:26:44Zen
dc.date.issued2014-08en
dc.identifier.isbn9781479956227en
dc.identifier.doi10.1109/NANO.2014.6967961en
dc.identifier.urihttp://hdl.handle.net/10754/564973en
dc.description.abstractCommercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.titleCMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabricen
dc.typeConference Paperen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journal14th IEEE International Conference on Nanotechnologyen
dc.conference.date18 August 2014 through 21 August 2014en
dc.conference.name2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014en
kaust.authorGhoneim, Mohamed T.en
kaust.authorHanna, Amiren
kaust.authorHussain, Muhammad Mustafaen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.