Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

Handle URI:
http://hdl.handle.net/10754/564972
Title:
Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)
Authors:
Nassar, Joanna M.; Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Rojas, Jhonathan Prieto ( 0000-0001-7848-1121 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.
KAUST Department:
Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
14th IEEE International Conference on Nanotechnology
Conference/Event name:
2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014
Issue Date:
Aug-2014
DOI:
10.1109/NANO.2014.6968081
Type:
Conference Paper
ISBN:
9781479956227
Appears in Collections:
Conference Papers; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorNassar, Joanna M.en
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorRojas, Jhonathan Prietoen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-04T07:26:42Zen
dc.date.available2015-08-04T07:26:42Zen
dc.date.issued2014-08en
dc.identifier.isbn9781479956227en
dc.identifier.doi10.1109/NANO.2014.6968081en
dc.identifier.urihttp://hdl.handle.net/10754/564972en
dc.description.abstractFlexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.titleTransfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)en
dc.typeConference Paperen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journal14th IEEE International Conference on Nanotechnologyen
dc.conference.date18 August 2014 through 21 August 2014en
dc.conference.name2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014en
kaust.authorNassar, Joanna M.en
kaust.authorHussain, Aftab M.en
kaust.authorRojas, Jhonathan Prietoen
kaust.authorHussain, Muhammad Mustafaen
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