CMOS compatible route for GaAs based large scale flexible and transparent electronics

Handle URI:
http://hdl.handle.net/10754/564971
Title:
CMOS compatible route for GaAs based large scale flexible and transparent electronics
Authors:
Nour, Maha A.; Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Droopad, Ravi; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Flexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semitransparent platform. We show a simple release process for peeling off 200 nm of GaAs from 200 nm GaAs/300 nm AlAs stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes which contributes to the better transparency (45 % at 724 nm wavelength) observed.
KAUST Department:
Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
14th IEEE International Conference on Nanotechnology
Conference/Event name:
2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014
Issue Date:
Aug-2014
DOI:
10.1109/NANO.2014.6968018
Type:
Conference Paper
ISBN:
9781479956227
Appears in Collections:
Conference Papers; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorNour, Maha A.en
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorDroopad, Ravien
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-04T07:26:40Zen
dc.date.available2015-08-04T07:26:40Zen
dc.date.issued2014-08en
dc.identifier.isbn9781479956227en
dc.identifier.doi10.1109/NANO.2014.6968018en
dc.identifier.urihttp://hdl.handle.net/10754/564971en
dc.description.abstractFlexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semitransparent platform. We show a simple release process for peeling off 200 nm of GaAs from 200 nm GaAs/300 nm AlAs stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes which contributes to the better transparency (45 % at 724 nm wavelength) observed.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.titleCMOS compatible route for GaAs based large scale flexible and transparent electronicsen
dc.typeConference Paperen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journal14th IEEE International Conference on Nanotechnologyen
dc.conference.date18 August 2014 through 21 August 2014en
dc.conference.name2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014en
dc.contributor.institutionDepartment of Physics, Texas State UniversitySan Marcos, TX, United Statesen
kaust.authorNour, Maha A.en
kaust.authorGhoneim, Mohamed T.en
kaust.authorHussain, Muhammad Mustafaen
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