Leakage analysis of crossbar memristor arrays

Handle URI:
http://hdl.handle.net/10754/564948
Title:
Leakage analysis of crossbar memristor arrays
Authors:
Zidan, Mohammed A. ( 0000-0003-3843-814X ) ; Salem, Ahmed Sultan; Fahmy, Hossam Aly Hassan; Salama, Khaled N. ( 0000-0001-7742-1282 )
Abstract:
Crossbar memristor arrays provide a promising high density alternative for the current memory and storage technologies. These arrays suffer from parasitic current components that significantly increase the power consumption, and could ruin the readout operation. In this work we study the trade-off between the crossbar array density and the power consumption required for its readout. Our analysis is based on simulating full memristor arrays on a SPICE platform.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Sensors Lab
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2014 14th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA)
Conference/Event name:
2014 14th International Workshop on Cellular Nanoscale Networks and Their Applications, CNNA 2014
Issue Date:
Jul-2014
DOI:
10.1109/CNNA.2014.6888635
Type:
Conference Paper
ISSN:
21650160
ISBN:
9781479964680
Appears in Collections:
Conference Papers; Electrical Engineering Program; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZidan, Mohammed A.en
dc.contributor.authorSalem, Ahmed Sultanen
dc.contributor.authorFahmy, Hossam Aly Hassanen
dc.contributor.authorSalama, Khaled N.en
dc.date.accessioned2015-08-04T07:26:00Zen
dc.date.available2015-08-04T07:26:00Zen
dc.date.issued2014-07en
dc.identifier.isbn9781479964680en
dc.identifier.issn21650160en
dc.identifier.doi10.1109/CNNA.2014.6888635en
dc.identifier.urihttp://hdl.handle.net/10754/564948en
dc.description.abstractCrossbar memristor arrays provide a promising high density alternative for the current memory and storage technologies. These arrays suffer from parasitic current components that significantly increase the power consumption, and could ruin the readout operation. In this work we study the trade-off between the crossbar array density and the power consumption required for its readout. Our analysis is based on simulating full memristor arrays on a SPICE platform.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectcrossbaren
dc.subjectMemoryen
dc.subjectMemristoren
dc.titleLeakage analysis of crossbar memristor arraysen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentSensors Laben
dc.identifier.journal2014 14th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA)en
dc.conference.date29 July 2014 through 31 July 2014en
dc.conference.name2014 14th International Workshop on Cellular Nanoscale Networks and Their Applications, CNNA 2014en
dc.contributor.institutionFaculty of Engineering, Cairo UniversityGiza, Egypten
kaust.authorZidan, Mohammed A.en
kaust.authorSalama, Khaled N.en
kaust.authorSalem, Ahmed Sultanen
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