Wavy channel Thin Film Transistor for area efficient, high performance and low power applications

Handle URI:
http://hdl.handle.net/10754/564939
Title:
Wavy channel Thin Film Transistor for area efficient, high performance and low power applications
Authors:
Hanna, Amir ( 0000-0003-4679-366X ) ; Sevilla, Galo T. ( 0000-0002-9419-4437 ) ; Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
We report a new Thin Film Transistor (TFT) architecture that allows expansion of the device width using wavy (continuous without separation) fin features - termed as wavy channel (WC) architecture. This architecture allows expansion of transistor width in a direction perpendicular to the substrate, thus not consuming extra chip area, achieving area efficiency. The devices have shown for a 13% increase in the device width resulting in a maximum 2.4x increase in 'ON' current value of the WCTFT, when compared to planar devices consuming the same chip area, while using atomic layer deposition based zinc oxide (ZnO) as the channel material. The WCTFT devices also maintain similar 'OFF' current value, similar to 100 pA, when compared to planar devices, thus not compromising on power consumption for performance which usually happens with larger width devices. This work offers a pragmatic opportunity to use WCTFTs as backplane circuitry for large-area high-resolution display applications without any limitation any TFT materials.
KAUST Department:
Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Materials Science and Engineering Program
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)
Conference/Event name:
10th Conference on Ph. D. Research in Microelectronics and Electronics, PRIME 2014
Issue Date:
Jun-2014
DOI:
10.1109/prime.2014.6872756
Type:
Conference Paper
ISBN:
9781479949946
Appears in Collections:
Conference Papers; Electrical Engineering Program; Materials Science and Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHanna, Amiren
dc.contributor.authorSevilla, Galo T.en
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-04T07:25:45Zen
dc.date.available2015-08-04T07:25:45Zen
dc.date.issued2014-06en
dc.identifier.isbn9781479949946en
dc.identifier.doi10.1109/prime.2014.6872756en
dc.identifier.urihttp://hdl.handle.net/10754/564939en
dc.description.abstractWe report a new Thin Film Transistor (TFT) architecture that allows expansion of the device width using wavy (continuous without separation) fin features - termed as wavy channel (WC) architecture. This architecture allows expansion of transistor width in a direction perpendicular to the substrate, thus not consuming extra chip area, achieving area efficiency. The devices have shown for a 13% increase in the device width resulting in a maximum 2.4x increase in 'ON' current value of the WCTFT, when compared to planar devices consuming the same chip area, while using atomic layer deposition based zinc oxide (ZnO) as the channel material. The WCTFT devices also maintain similar 'OFF' current value, similar to 100 pA, when compared to planar devices, thus not compromising on power consumption for performance which usually happens with larger width devices. This work offers a pragmatic opportunity to use WCTFTs as backplane circuitry for large-area high-resolution display applications without any limitation any TFT materials.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.titleWavy channel Thin Film Transistor for area efficient, high performance and low power applicationsen
dc.typeConference Paperen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journal2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)en
dc.conference.date29 June 2014 through 3 July 2014en
dc.conference.name10th Conference on Ph. D. Research in Microelectronics and Electronics, PRIME 2014en
kaust.authorHanna, Amiren
kaust.authorSevilla, Galo T.en
kaust.authorGhoneim, Mohamed T.en
kaust.authorHussain, Muhammad Mustafaen
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