Spatial correlation of conductive filaments for multiple switching cycles in CBRAM

Handle URI:
http://hdl.handle.net/10754/564938
Title:
Spatial correlation of conductive filaments for multiple switching cycles in CBRAM
Authors:
Pey, K. L.; Raghavan, N.; Wu, X.; Bosman, M.; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Li, Kun
Abstract:
Conducting bridge random access memory (CBRAM) is one of the potential technologies being considered for replacement of Flash memory for non-volatile data storage. CBRAM devices operate on the principle of nucleation and rupture of metallic filaments. One key concern for commercializing this technology is the question of variability which could arise due to nucleation of multiple filaments across the device at spatially different locations. The spatial spread of the filament location may cause long tails at the low and high percentile regions for the switching parameter distribution as the new filament that nucleates may have a completely different shape and size. It is therefore essential to probe whether switching in CBRAM occurs every time at the same filament location or whether there are other new filaments that could nucleate during repeated cycling with some spatial correlation (if any) to the original filament. To investigate this issue, we make use of a metal-insulator-semiconductor (M-I-S) transistor test structure with Ni as the top electrode and HfOx/SiOx as the dielectric stack. In-situ stressing using a nano-tip on the M-I-S stack is performed and the filament is imaged in real-time using a high resolution transmission electron microscope (TEM). We also extract the location of the filament (LFIL) along the channel of the transistor after the nucleation stage using the weighted proportion of the source and drain currents. © 2014 IEEE.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Core Labs
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2014 IEEE International Conference on Electron Devices and Solid-State Circuits
Conference/Event name:
2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
Issue Date:
Jun-2014
DOI:
10.1109/EDSSC.2014.7061251
Type:
Conference Paper
ISBN:
9781479923342
Appears in Collections:
Conference Papers; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorPey, K. L.en
dc.contributor.authorRaghavan, N.en
dc.contributor.authorWu, X.en
dc.contributor.authorBosman, M.en
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorLi, Kunen
dc.date.accessioned2015-08-04T07:25:43Zen
dc.date.available2015-08-04T07:25:43Zen
dc.date.issued2014-06en
dc.identifier.isbn9781479923342en
dc.identifier.doi10.1109/EDSSC.2014.7061251en
dc.identifier.urihttp://hdl.handle.net/10754/564938en
dc.description.abstractConducting bridge random access memory (CBRAM) is one of the potential technologies being considered for replacement of Flash memory for non-volatile data storage. CBRAM devices operate on the principle of nucleation and rupture of metallic filaments. One key concern for commercializing this technology is the question of variability which could arise due to nucleation of multiple filaments across the device at spatially different locations. The spatial spread of the filament location may cause long tails at the low and high percentile regions for the switching parameter distribution as the new filament that nucleates may have a completely different shape and size. It is therefore essential to probe whether switching in CBRAM occurs every time at the same filament location or whether there are other new filaments that could nucleate during repeated cycling with some spatial correlation (if any) to the original filament. To investigate this issue, we make use of a metal-insulator-semiconductor (M-I-S) transistor test structure with Ni as the top electrode and HfOx/SiOx as the dielectric stack. In-situ stressing using a nano-tip on the M-I-S stack is performed and the filament is imaged in real-time using a high resolution transmission electron microscope (TEM). We also extract the location of the filament (LFIL) along the channel of the transistor after the nucleation stage using the weighted proportion of the source and drain currents. © 2014 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectConducting bridge memoryen
dc.subjectFilament locationen
dc.subjectMetal filamenten
dc.subjectNucleationen
dc.subjectRuptureen
dc.subjectSpatial correlationen
dc.titleSpatial correlation of conductive filaments for multiple switching cycles in CBRAMen
dc.typeConference Paperen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentCore Labsen
dc.identifier.journal2014 IEEE International Conference on Electron Devices and Solid-State Circuitsen
dc.conference.date18 June 2014 through 20 June 2014en
dc.conference.name2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014en
dc.contributor.institutionEngineering Product Development, Singapore University of Technology and Design, Singaporeen
dc.contributor.institutionSchool of Information Science and Technology, East China Normal UniversityShanghai, Chinaen
dc.contributor.institutionASTAR, Institute of Materials Research and Engineering (IMRE), Singaporeen
kaust.authorZhang, Xixiangen
kaust.authorLi, Kunen
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