High performance flexible CMOS SOI FinFETs

Handle URI:
http://hdl.handle.net/10754/564925
Title:
High performance flexible CMOS SOI FinFETs
Authors:
Fahad, Hossain M.; Sevilla, Galo T. ( 0000-0002-9419-4437 ) ; Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today's traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world's highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Integrated Nanotechnology Lab
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
72nd Device Research Conference
Conference/Event name:
72nd Device Research Conference, DRC 2014
Issue Date:
Jun-2014
DOI:
10.1109/DRC.2014.6872382
Type:
Conference Paper
ISSN:
15483770
ISBN:
9781479954056
Appears in Collections:
Conference Papers; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorFahad, Hossain M.en
dc.contributor.authorSevilla, Galo T.en
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-04T07:25:21Zen
dc.date.available2015-08-04T07:25:21Zen
dc.date.issued2014-06en
dc.identifier.isbn9781479954056en
dc.identifier.issn15483770en
dc.identifier.doi10.1109/DRC.2014.6872382en
dc.identifier.urihttp://hdl.handle.net/10754/564925en
dc.description.abstractWe demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today's traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world's highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.titleHigh performance flexible CMOS SOI FinFETsen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.identifier.journal72nd Device Research Conferenceen
dc.conference.date22 June 2014 through 25 June 2014en
dc.conference.name72nd Device Research Conference, DRC 2014en
dc.conference.locationSanta Barbara, CAen
kaust.authorFahad, Hossain M.en
kaust.authorGhoneim, Mohamed T.en
kaust.authorHussain, Muhammad Mustafaen
kaust.authorSevilla, Galo T.en
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