Red to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LED

Handle URI:
http://hdl.handle.net/10754/564845
Title:
Red to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LED
Authors:
Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Zhao, Chao ( 0000-0002-9582-1068 ) ; Shen, Chao; Jahangir, Shafat; Janjua, Bilal ( 0000-0001-9974-9879 ) ; Ben Slimane, Ahmed ( 0000-0002-5515-1151 ) ; Kang, Chunhong; Syed, Ahad A.; Li, Jingqi; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Bhattacharya, Pallab K.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
The InGaN/GaN quantum-disks-in-nanowire light-emitting diode (LED) with emission centered at ~830nm, the longest emission wavelength ever reported in the InGaN/GaN system, and spectral linewidth of 290nm, has been fabricated with p-side-down on a Cu substrate.
KAUST Department:
Photonics Laboratory; Advanced Nanofabrication, Imaging and Characterization Core Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Core Labs; Materials Science and Engineering Program
Publisher:
The Optical Society
Journal:
CLEO: 2014
Conference/Event name:
CLEO: Science and Innovations, CLEO_SI 2014
Issue Date:
2014
DOI:
10.1364/cleo_si.2014.sm2j.2
Type:
Conference Paper
ISSN:
21622701
ISBN:
9781557529992
Appears in Collections:
Conference Papers; Advanced Nanofabrication, Imaging and Characterization Core Lab; Electrical Engineering Program; Materials Science and Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorZhao, Chaoen
dc.contributor.authorShen, Chaoen
dc.contributor.authorJahangir, Shafaten
dc.contributor.authorJanjua, Bilalen
dc.contributor.authorBen Slimane, Ahmeden
dc.contributor.authorKang, Chunhongen
dc.contributor.authorSyed, Ahad A.en
dc.contributor.authorLi, Jingqien
dc.contributor.authorAlyamani, Ahmed Y.en
dc.contributor.authorEl-Desouki, Munir M.en
dc.contributor.authorBhattacharya, Pallab K.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-08-04T07:22:54Zen
dc.date.available2015-08-04T07:22:54Zen
dc.date.issued2014en
dc.identifier.isbn9781557529992en
dc.identifier.issn21622701en
dc.identifier.doi10.1364/cleo_si.2014.sm2j.2en
dc.identifier.urihttp://hdl.handle.net/10754/564845en
dc.description.abstractThe InGaN/GaN quantum-disks-in-nanowire light-emitting diode (LED) with emission centered at ~830nm, the longest emission wavelength ever reported in the InGaN/GaN system, and spectral linewidth of 290nm, has been fabricated with p-side-down on a Cu substrate.en
dc.publisherThe Optical Societyen
dc.titleRed to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LEDen
dc.typeConference Paperen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentCore Labsen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalCLEO: 2014en
dc.conference.date8 June 2014 through 13 June 2014en
dc.conference.nameCLEO: Science and Innovations, CLEO_SI 2014en
dc.conference.locationSan Jose, CAen
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, United Statesen
dc.contributor.institutionNational Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabiaen
kaust.authorNg, Tien Kheeen
kaust.authorZhao, Chaoen
kaust.authorShen, Chaoen
kaust.authorBen Slimane, Ahmeden
kaust.authorLi, Jingqien
kaust.authorOoi, Boon S.en
kaust.authorJanjua, Bilalen
kaust.authorKang, Chunhongen
kaust.authorSyed, Ahad A.en
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