Time variant layer control in atmospheric pressure chemical vapor deposition based growth of graphene

Handle URI:
http://hdl.handle.net/10754/564696
Title:
Time variant layer control in atmospheric pressure chemical vapor deposition based growth of graphene
Authors:
Qaisi, Ramy M. ( 0000-0003-0968-5483 ) ; Smith, Casey; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Graphene is a semi-metallic, transparent, atomic crystal structure material which is promising for its high mobility, strength and transparency - potentially applicable for radio frequency (RF) circuitry and energy harvesting and storage applications. Uniform (same number of layers), continuous (not torn or discontinuous), large area (100 mm to 200 mm wafer scale), low-cost, reliable growth are the first hand challenges for its commercialization prospect. We show a time variant uniform (layer control) growth of bi- to multi-layer graphene using atmospheric chemical vapor deposition system. We use Raman spectroscopy for physical characterization supported by electrical property analysis. © 2013 IEEE.
KAUST Department:
Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2013 Saudi International Electronics, Communications and Photonics Conference
Conference/Event name:
2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013
Issue Date:
Apr-2013
DOI:
10.1109/SIECPC.2013.6550799
Type:
Conference Paper
ISBN:
9781467361958
Appears in Collections:
Conference Papers; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorQaisi, Ramy M.en
dc.contributor.authorSmith, Caseyen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-04T07:12:50Zen
dc.date.available2015-08-04T07:12:50Zen
dc.date.issued2013-04en
dc.identifier.isbn9781467361958en
dc.identifier.doi10.1109/SIECPC.2013.6550799en
dc.identifier.urihttp://hdl.handle.net/10754/564696en
dc.description.abstractGraphene is a semi-metallic, transparent, atomic crystal structure material which is promising for its high mobility, strength and transparency - potentially applicable for radio frequency (RF) circuitry and energy harvesting and storage applications. Uniform (same number of layers), continuous (not torn or discontinuous), large area (100 mm to 200 mm wafer scale), low-cost, reliable growth are the first hand challenges for its commercialization prospect. We show a time variant uniform (layer control) growth of bi- to multi-layer graphene using atmospheric chemical vapor deposition system. We use Raman spectroscopy for physical characterization supported by electrical property analysis. © 2013 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectatmospheric pressure chemical vapor deposition (APCVD)en
dc.subjectgrapheneen
dc.subjectRaman spectroscopyen
dc.titleTime variant layer control in atmospheric pressure chemical vapor deposition based growth of grapheneen
dc.typeConference Paperen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journal2013 Saudi International Electronics, Communications and Photonics Conferenceen
dc.conference.date27 April 2013 through 30 April 2013en
dc.conference.name2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013en
dc.conference.locationRiyadhen
kaust.authorQaisi, Ramy M.en
kaust.authorSmith, Caseyen
kaust.authorHussain, Muhammad Mustafaen
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