Chemical vapor deposition based tungsten disulfide (WS2) thin film transistor

Handle URI:
http://hdl.handle.net/10754/564695
Title:
Chemical vapor deposition based tungsten disulfide (WS2) thin film transistor
Authors:
Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Sevilla, Galo T. ( 0000-0002-9419-4437 ) ; Rader, Kelly; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Tungsten disulfide (WS2) is a layered transition metal dichalcogenide with a reported band gap of 1.8 eV in bulk and 1.32-1.4 eV in its thin film form. 2D atomic layers of metal dichalcogenides have shown changes in conductivity with applied electric field. This makes them an interesting option for channel material in field effect transistors (FETs). Therefore, we show a highly manufacturable chemical vapor deposition (CVD) based simple process to grow WS2 directly on silicon oxide in a furnace and then its transistor action with back gated device with room temperature field effect mobility of 0.1003 cm2/V-s using the Schottky barrier contact model. We also show the semiconducting behavior of this WS2 thin film which is more promising than thermally unstable organic materials for thin film transistor application. Our direct growth method on silicon oxide also holds interesting opportunities for macro-electronics applications. © 2013 IEEE.
KAUST Department:
Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2013 Saudi International Electronics, Communications and Photonics Conference
Conference/Event name:
2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013
Issue Date:
Apr-2013
DOI:
10.1109/SIECPC.2013.6550981
Type:
Conference Paper
ISBN:
9781467361958
Appears in Collections:
Conference Papers; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorSevilla, Galo T.en
dc.contributor.authorRader, Kellyen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-04T07:12:48Zen
dc.date.available2015-08-04T07:12:48Zen
dc.date.issued2013-04en
dc.identifier.isbn9781467361958en
dc.identifier.doi10.1109/SIECPC.2013.6550981en
dc.identifier.urihttp://hdl.handle.net/10754/564695en
dc.description.abstractTungsten disulfide (WS2) is a layered transition metal dichalcogenide with a reported band gap of 1.8 eV in bulk and 1.32-1.4 eV in its thin film form. 2D atomic layers of metal dichalcogenides have shown changes in conductivity with applied electric field. This makes them an interesting option for channel material in field effect transistors (FETs). Therefore, we show a highly manufacturable chemical vapor deposition (CVD) based simple process to grow WS2 directly on silicon oxide in a furnace and then its transistor action with back gated device with room temperature field effect mobility of 0.1003 cm2/V-s using the Schottky barrier contact model. We also show the semiconducting behavior of this WS2 thin film which is more promising than thermally unstable organic materials for thin film transistor application. Our direct growth method on silicon oxide also holds interesting opportunities for macro-electronics applications. © 2013 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectchemical vapor depostion (CVD)en
dc.subjectthin film transsitor (TFT)en
dc.subjectTungsten disulfide (WS2)en
dc.titleChemical vapor deposition based tungsten disulfide (WS2) thin film transistoren
dc.typeConference Paperen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journal2013 Saudi International Electronics, Communications and Photonics Conferenceen
dc.conference.date27 April 2013 through 30 April 2013en
dc.conference.name2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013en
dc.conference.locationRiyadhen
kaust.authorHussain, Aftab M.en
kaust.authorSevilla, Galo T.en
kaust.authorRader, Kellyen
kaust.authorHussain, Muhammad Mustafaen
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