Amorphous metal based nanoelectromechanical switch

Handle URI:
http://hdl.handle.net/10754/564694
Title:
Amorphous metal based nanoelectromechanical switch
Authors:
Mayet, Abdulilah M. ( 0000-0001-7739-0105 ) ; Smith, Casey; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.
KAUST Department:
Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2013 Saudi International Electronics, Communications and Photonics Conference
Conference/Event name:
2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013
Issue Date:
Apr-2013
DOI:
10.1109/SIECPC.2013.6550765
Type:
Conference Paper
ISBN:
9781467361958
Appears in Collections:
Conference Papers; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorMayet, Abdulilah M.en
dc.contributor.authorSmith, Caseyen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-04T07:12:45Zen
dc.date.available2015-08-04T07:12:45Zen
dc.date.issued2013-04en
dc.identifier.isbn9781467361958en
dc.identifier.doi10.1109/SIECPC.2013.6550765en
dc.identifier.urihttp://hdl.handle.net/10754/564694en
dc.description.abstractNanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectAmorphous metalen
dc.subjectelectron beam lithographyen
dc.subjectnanoelectromechanical switchen
dc.subjectpull-in voltageen
dc.titleAmorphous metal based nanoelectromechanical switchen
dc.typeConference Paperen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journal2013 Saudi International Electronics, Communications and Photonics Conferenceen
dc.conference.date27 April 2013 through 30 April 2013en
dc.conference.name2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013en
dc.conference.locationRiyadhen
kaust.authorSmith, Caseyen
kaust.authorHussain, Muhammad Mustafaen
kaust.authorMayet, Abdulilah M.en
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