Surfactant mediated slurry formulations for Ge CMP applications

Handle URI:
http://hdl.handle.net/10754/564670
Title:
Surfactant mediated slurry formulations for Ge CMP applications
Authors:
Basim, G. Bahar; Karagöz, Ayşe; Chen, Long; Vakarelski, Ivan Uriev ( 0000-0001-9244-9160 )
Abstract:
In this study, slurry formulations in the presence of self-assembled surfactant structures were investigated for Ge/SiO2 CMP applications in the absence and presence of oxidizers. Both anionic (sodium dodecyl sulfate-SDS) and cationic (cetyl trimethyl ammonium bromide-C12TAB) micelles were used in the slurry formulations as a function of pH and oxidizer concentration. CMP performances of Ge and SiO2 wafers were evaluated in terms of material removal rates, selectivity and surface quality. The material removal rate responses were also assessed through AFM wear rate tests to obtain a faster response for preliminary analyses. The surfactant adsorption characteristics were studied through surface wettability responses of the Ge and SiO2 wafers through contact angle measurements. It was observed that the self-assembled surfactant structures can help obtain selectivity on the silica/germanium system at low concentrations of the oxidizer in the slurry. © 2013 Materials Research Society.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Core Labs
Publisher:
Cambridge University Press (CUP)
Journal:
MRS Proceedings
Conference/Event name:
2013 MRS Spring Meeting
Issue Date:
2013
DOI:
10.1557/opl.2013.971
Type:
Conference Paper
ISSN:
02729172
ISBN:
9781632661425
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorBasim, G. Baharen
dc.contributor.authorKaragöz, Ayşeen
dc.contributor.authorChen, Longen
dc.contributor.authorVakarelski, Ivan Urieven
dc.date.accessioned2015-08-04T07:11:44Zen
dc.date.available2015-08-04T07:11:44Zen
dc.date.issued2013en
dc.identifier.isbn9781632661425en
dc.identifier.issn02729172en
dc.identifier.doi10.1557/opl.2013.971en
dc.identifier.urihttp://hdl.handle.net/10754/564670en
dc.description.abstractIn this study, slurry formulations in the presence of self-assembled surfactant structures were investigated for Ge/SiO2 CMP applications in the absence and presence of oxidizers. Both anionic (sodium dodecyl sulfate-SDS) and cationic (cetyl trimethyl ammonium bromide-C12TAB) micelles were used in the slurry formulations as a function of pH and oxidizer concentration. CMP performances of Ge and SiO2 wafers were evaluated in terms of material removal rates, selectivity and surface quality. The material removal rate responses were also assessed through AFM wear rate tests to obtain a faster response for preliminary analyses. The surfactant adsorption characteristics were studied through surface wettability responses of the Ge and SiO2 wafers through contact angle measurements. It was observed that the self-assembled surfactant structures can help obtain selectivity on the silica/germanium system at low concentrations of the oxidizer in the slurry. © 2013 Materials Research Society.en
dc.publisherCambridge University Press (CUP)en
dc.titleSurfactant mediated slurry formulations for Ge CMP applicationsen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentCore Labsen
dc.identifier.journalMRS Proceedingsen
dc.conference.date1 April 2013 through 5 April 2013en
dc.conference.name2013 MRS Spring Meetingen
dc.conference.locationSan Francisco, CAen
dc.contributor.institutionOzyegin University, Department of Mechanical Engineering, Nisantepe Mevki, Orman Sokak, No 13, Alemdag, Cekmekoy, 34794, Istanbul, Turkeyen
kaust.authorChen, Longen
kaust.authorVakarelski, Ivan Urieven
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.