Memristor-based relaxation oscillators using digital gates

Handle URI:
http://hdl.handle.net/10754/564621
Title:
Memristor-based relaxation oscillators using digital gates
Authors:
Khatib, Moustafa A.; Fouda, Mohamed E.; Mosad, Ahmed G.; Salama, Khaled N. ( 0000-0001-7742-1282 ) ; Radwan, Ahmed G.
Abstract:
This paper presents two memristor-based relaxation oscillators. The proposed oscillators are designed without the need of any reactive elements, i.e., capacitor or inductor. As the 'resistance storage' property of the memristor can be exploited to generate the oscillation. The proposed oscillators have the advantage that they can be fully integrated on-chip giving an area-efficient solution. Furthermore, these oscillators give higher frequency other than the existing reactance-less oscillator and provide a wider range of the resistance. The concept of operation and the mathematical analysis for the proposed oscillators are explained and verified with circuit simulations showing an excellent agreement. © 2012 IEEE.
KAUST Department:
Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Physical Sciences and Engineering (PSE) Division; Sensors Lab
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2012 Seventh International Conference on Computer Engineering & Systems (ICCES)
Conference/Event name:
2012 7th International Conference on Computer Engineering and Systems, ICCES 2012
Issue Date:
Nov-2012
DOI:
10.1109/ICCES.2012.6408491
Type:
Conference Paper
ISBN:
9781467329613
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorKhatib, Moustafa A.en
dc.contributor.authorFouda, Mohamed E.en
dc.contributor.authorMosad, Ahmed G.en
dc.contributor.authorSalama, Khaled N.en
dc.contributor.authorRadwan, Ahmed G.en
dc.date.accessioned2015-08-04T07:05:19Zen
dc.date.available2015-08-04T07:05:19Zen
dc.date.issued2012-11en
dc.identifier.isbn9781467329613en
dc.identifier.doi10.1109/ICCES.2012.6408491en
dc.identifier.urihttp://hdl.handle.net/10754/564621en
dc.description.abstractThis paper presents two memristor-based relaxation oscillators. The proposed oscillators are designed without the need of any reactive elements, i.e., capacitor or inductor. As the 'resistance storage' property of the memristor can be exploited to generate the oscillation. The proposed oscillators have the advantage that they can be fully integrated on-chip giving an area-efficient solution. Furthermore, these oscillators give higher frequency other than the existing reactance-less oscillator and provide a wider range of the resistance. The concept of operation and the mathematical analysis for the proposed oscillators are explained and verified with circuit simulations showing an excellent agreement. © 2012 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectMemristive circuitsen
dc.subjectMemristoren
dc.subjectReactance-less oscillatoren
dc.subjectRelaxation oscillatoren
dc.subjectS-Gate oscillatoren
dc.titleMemristor-based relaxation oscillators using digital gatesen
dc.typeConference Paperen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSensors Laben
dc.identifier.journal2012 Seventh International Conference on Computer Engineering & Systems (ICCES)en
dc.conference.date27 November 2012 through 29 November 2012en
dc.conference.name2012 7th International Conference on Computer Engineering and Systems, ICCES 2012en
dc.conference.locationCairoen
dc.contributor.institutionNISC Research Center, Mie University, Carro, Egypten
kaust.authorSalama, Khaled N.en
kaust.authorRadwan, Ahmed G.en
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