Effect of boundary on controlled memristor-based oscillator

Handle URI:
http://hdl.handle.net/10754/564614
Title:
Effect of boundary on controlled memristor-based oscillator
Authors:
Fouda, Mohamed E.; Radwan, Ahmed Gomaa; Salama, Khaled N. ( 0000-0001-7742-1282 )
Abstract:
Recently, the applications of memristors have spread into many fields and especially in the circuit theory. Many models have been proposed for the HP-memristor based on the window functions. In this paper, we introduce a complete mathematical analysis of the controlled reactance-less oscillator for two different window functions of Joglekar's model (linear and nonlinear dopant drift) to discuss the effect of changing the window function on the oscillator's behavior. The generalized necessary and sufficient conditions based on the circuit elements and control voltages for both the linear and nonlinear models are introduced. Moreover, closed form expressions for the oscillation frequency and duty cycle are derived for these models and verified using PSPICE simulations showing an excellent matching. Finally a comparison between the linear and nonlinear models which shows their effect on the oscillation frequency and conditions of oscillation is introduced. © 2012 IEEE.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Sensors Lab
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2012 International Conference on Engineering and Technology (ICET)
Conference/Event name:
1st International Conference on Engineering and Technology, ICET 2012
Issue Date:
Oct-2012
DOI:
10.1109/ICEngTechnol.2012.6396147
Type:
Conference Paper
ISBN:
9781467348089
Appears in Collections:
Conference Papers; Electrical Engineering Program; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorFouda, Mohamed E.en
dc.contributor.authorRadwan, Ahmed Gomaaen
dc.contributor.authorSalama, Khaled N.en
dc.date.accessioned2015-08-04T07:05:10Zen
dc.date.available2015-08-04T07:05:10Zen
dc.date.issued2012-10en
dc.identifier.isbn9781467348089en
dc.identifier.doi10.1109/ICEngTechnol.2012.6396147en
dc.identifier.urihttp://hdl.handle.net/10754/564614en
dc.description.abstractRecently, the applications of memristors have spread into many fields and especially in the circuit theory. Many models have been proposed for the HP-memristor based on the window functions. In this paper, we introduce a complete mathematical analysis of the controlled reactance-less oscillator for two different window functions of Joglekar's model (linear and nonlinear dopant drift) to discuss the effect of changing the window function on the oscillator's behavior. The generalized necessary and sufficient conditions based on the circuit elements and control voltages for both the linear and nonlinear models are introduced. Moreover, closed form expressions for the oscillation frequency and duty cycle are derived for these models and verified using PSPICE simulations showing an excellent matching. Finally a comparison between the linear and nonlinear models which shows their effect on the oscillation frequency and conditions of oscillation is introduced. © 2012 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectMemristive-based circuitsen
dc.subjectMemristoren
dc.subjectMemristor-based Oscillatoren
dc.subjectNonlinear model Analysisen
dc.titleEffect of boundary on controlled memristor-based oscillatoren
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentSensors Laben
dc.identifier.journal2012 International Conference on Engineering and Technology (ICET)en
dc.conference.date10 October 2012 through 11 October 2012en
dc.conference.name1st International Conference on Engineering and Technology, ICET 2012en
dc.conference.locationNew Cairoen
dc.contributor.institutionEngineering Mathematics Dept., Cairo University, Egypten
dc.contributor.institutionNanoelectronics Integrated Systems Center, Nile University, Cairo, Egypten
kaust.authorSalama, Khaled N.en
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