Room temperature inductively coupled plasma etching of InAs/InSb in BCl 3/Cl 2/Ar

Handle URI:
http://hdl.handle.net/10754/564613
Title:
Room temperature inductively coupled plasma etching of InAs/InSb in BCl 3/Cl 2/Ar
Authors:
Sun, Jian; Kosel, Jürgen ( 0000-0002-8998-8275 )
Abstract:
Inductively coupled plasma (ICP) etching of InAs and InSb at room temperature has been investigated using BCl 3/Cl 2/Ar plasma. Specifically, the etch rate and post-etching surface morphology were investigated as functions of the gas composition, ICP power, process pressure, and RF chuck power. An optimized process has been developed, yielding anisotropic etching and very smooth surfaces with roughnesses of 0.25 nm for InAs, and 0.57 nm for InSb, which is comparable with the surface of epi-ready polished wafers. The process provides moderate etching rates of 820 /min for InAs and 2800 /min for InSb, and the micro-masking effect is largely avoided. © 2012 Elsevier B.V. All rights reserved.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Sensing, Magnetism and Microsystems Lab
Publisher:
Elsevier BV
Journal:
Microelectronic Engineering
Conference/Event name:
Special issue MNE 2011 - Part II
Issue Date:
Oct-2012
DOI:
10.1016/j.mee.2012.07.018
Type:
Conference Paper
ISSN:
01679317
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Sensing, Magnetism and Microsystems Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSun, Jianen
dc.contributor.authorKosel, Jürgenen
dc.date.accessioned2015-08-04T07:05:09Zen
dc.date.available2015-08-04T07:05:09Zen
dc.date.issued2012-10en
dc.identifier.issn01679317en
dc.identifier.doi10.1016/j.mee.2012.07.018en
dc.identifier.urihttp://hdl.handle.net/10754/564613en
dc.description.abstractInductively coupled plasma (ICP) etching of InAs and InSb at room temperature has been investigated using BCl 3/Cl 2/Ar plasma. Specifically, the etch rate and post-etching surface morphology were investigated as functions of the gas composition, ICP power, process pressure, and RF chuck power. An optimized process has been developed, yielding anisotropic etching and very smooth surfaces with roughnesses of 0.25 nm for InAs, and 0.57 nm for InSb, which is comparable with the surface of epi-ready polished wafers. The process provides moderate etching rates of 820 /min for InAs and 2800 /min for InSb, and the micro-masking effect is largely avoided. © 2012 Elsevier B.V. All rights reserved.en
dc.publisherElsevier BVen
dc.subjectEtchingen
dc.subjectIII-V semiconductoren
dc.subjectInAsen
dc.subjectInductive coupled plasmaen
dc.subjectInSben
dc.subjectMicrofabricationen
dc.titleRoom temperature inductively coupled plasma etching of InAs/InSb in BCl 3/Cl 2/Aren
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentSensing, Magnetism and Microsystems Laben
dc.identifier.journalMicroelectronic Engineeringen
dc.conference.date19–23 September 2011en
dc.conference.nameSpecial issue MNE 2011 - Part IIen
dc.conference.locationBerlinen
kaust.authorSun, Jianen
kaust.authorKosel, Jürgenen
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