Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

Handle URI:
http://hdl.handle.net/10754/564558
Title:
Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions
Authors:
Useinov, Arthur; Gooneratne, Chinthaka Pasan; Kosel, Jürgen ( 0000-0002-8998-8275 )
Abstract:
In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Sensing, Magnetism and Microsystems Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program
Publisher:
Trans Tech Publications
Journal:
Solid State Phenomena
Conference/Event name:
5th Moscow International Symposium on Magnetism, MISM 2011
Issue Date:
Jun-2012
DOI:
10.4028/www.scientific.net/SSP.190.145
Type:
Conference Paper
ISSN:
10120394
ISBN:
9783037854365
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Sensing, Magnetism and Microsystems Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorUseinov, Arthuren
dc.contributor.authorGooneratne, Chinthaka Pasanen
dc.contributor.authorKosel, Jürgenen
dc.date.accessioned2015-08-04T07:03:57Zen
dc.date.available2015-08-04T07:03:57Zen
dc.date.issued2012-06en
dc.identifier.isbn9783037854365en
dc.identifier.issn10120394en
dc.identifier.doi10.4028/www.scientific.net/SSP.190.145en
dc.identifier.urihttp://hdl.handle.net/10754/564558en
dc.description.abstractIn this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.en
dc.publisherTrans Tech Publicationsen
dc.subjectMagnetic tunnel junctionen
dc.subjectSpin polarized transporten
dc.subjectTunnel magnetoresistanceen
dc.titleAsymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctionsen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSensing, Magnetism and Microsystems Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalSolid State Phenomenaen
dc.conference.date21 August 2011 through 25 August 2011en
dc.conference.name5th Moscow International Symposium on Magnetism, MISM 2011en
dc.conference.locationMoscowen
kaust.authorUseinov, Arthuren
kaust.authorGooneratne, Chinthaka Pasanen
kaust.authorKosel, Jürgenen
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