Raman study of localized recrystallization of amorphous silicon induced by laser beam

Handle URI:
http://hdl.handle.net/10754/564556
Title:
Raman study of localized recrystallization of amorphous silicon induced by laser beam
Authors:
Tabet, Nouar A.; Al-Sayoud, Abduljabar; Said, Seyed; Yang, Xiaoming; Yang, Yang; Syed, Ahad A.; Diallo, Elhadj; Wang, Zhihong; Wang, Xianbin; Johlin, Eric; Simmons, Christine; Buonassisi, Tonio
Abstract:
The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter. © 2012 IEEE.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab; Core Labs
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2012 38th IEEE Photovoltaic Specialists Conference
Conference/Event name:
38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Issue Date:
Jun-2012
DOI:
10.1109/PVSC.2012.6317637
Type:
Conference Paper
ISSN:
01608371
ISBN:
9781467300643
Appears in Collections:
Conference Papers; Advanced Nanofabrication, Imaging and Characterization Core Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorTabet, Nouar A.en
dc.contributor.authorAl-Sayoud, Abduljabaren
dc.contributor.authorSaid, Seyeden
dc.contributor.authorYang, Xiaomingen
dc.contributor.authorYang, Yangen
dc.contributor.authorSyed, Ahad A.en
dc.contributor.authorDiallo, Elhadjen
dc.contributor.authorWang, Zhihongen
dc.contributor.authorWang, Xianbinen
dc.contributor.authorJohlin, Ericen
dc.contributor.authorSimmons, Christineen
dc.contributor.authorBuonassisi, Tonioen
dc.date.accessioned2015-08-04T07:03:54Zen
dc.date.available2015-08-04T07:03:54Zen
dc.date.issued2012-06en
dc.identifier.isbn9781467300643en
dc.identifier.issn01608371en
dc.identifier.doi10.1109/PVSC.2012.6317637en
dc.identifier.urihttp://hdl.handle.net/10754/564556en
dc.description.abstractThe adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter. © 2012 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectamorphous siliconen
dc.subjectRamanen
dc.subjectrecrystallizationen
dc.subjectstressesen
dc.titleRaman study of localized recrystallization of amorphous silicon induced by laser beamen
dc.typeConference Paperen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentCore Labsen
dc.identifier.journal2012 38th IEEE Photovoltaic Specialists Conferenceen
dc.conference.date3 June 2012 through 8 June 2012en
dc.conference.name38th IEEE Photovoltaic Specialists Conference, PVSC 2012en
dc.conference.locationAustin, TXen
dc.contributor.institutionKFUPM-MIT Center of Research for Clean Water and Clean Energy (CoR-CWCE), King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi Arabiaen
dc.contributor.institutionCenter of Research Excellence in Renewable Energy (CoRE-RE), King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi Arabiaen
dc.contributor.institutionMassachusetts Institute of Technology, Cambridge, MA 02139, United Statesen
kaust.authorYang, Xiaomingen
kaust.authorYang, Yangen
kaust.authorWang, Zhihongen
kaust.authorWang, Xianbinen
kaust.authorSyed, Ahad A.en
kaust.authorDiallo, Elhadjen
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