Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers

Handle URI:
http://hdl.handle.net/10754/564478
Title:
Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers
Authors:
Khan, Mohammed Zahed Mustafa ( 0000-0002-9734-5413 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
The effect of carrier relaxation process into the quantum dash (Qdash) ground state (GS) is examined theoretically by carrier-photon rate equation model incorporating the inhomogeneous broadening. Increase in the relaxation time and the inhomogeneous broadening degrades the threshold current density. Moreover, our results show that a relaxation time of less than 2 ps gives optimum laser performance. © 2011 IEEE.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Photonics Laboratory
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
8th International Conference on High-capacity Optical Networks and Emerging Technologies
Conference/Event name:
8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011
Issue Date:
Dec-2011
DOI:
10.1109/HONET.2011.6149813
Type:
Conference Paper
ISBN:
9781457711695
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorKhan, Mohammed Zahed Mustafaen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-08-04T07:02:01Zen
dc.date.available2015-08-04T07:02:01Zen
dc.date.issued2011-12en
dc.identifier.isbn9781457711695en
dc.identifier.doi10.1109/HONET.2011.6149813en
dc.identifier.urihttp://hdl.handle.net/10754/564478en
dc.description.abstractThe effect of carrier relaxation process into the quantum dash (Qdash) ground state (GS) is examined theoretically by carrier-photon rate equation model incorporating the inhomogeneous broadening. Increase in the relaxation time and the inhomogeneous broadening degrades the threshold current density. Moreover, our results show that a relaxation time of less than 2 ps gives optimum laser performance. © 2011 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectinhomogeneous broadeningen
dc.subjectQuantum-dash laseren
dc.subjectrate equation modelen
dc.subjectrelaxation processen
dc.titleEffect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasersen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journal8th International Conference on High-capacity Optical Networks and Emerging Technologiesen
dc.conference.date19 December 2011 through 21 December 2011en
dc.conference.name8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011en
dc.conference.locationRiyadhen
kaust.authorKhan, Mohammed Zahed Mustafaen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
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