Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

Handle URI:
http://hdl.handle.net/10754/564461
Title:
Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots
Authors:
Elafandy, Rami T.; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Yang, Yang; Cha, Dong Kyu; Zhang, Bei; Zhao, L. J.; Zhang, Meng; Bhattacharya, Pallab K.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Advanced Nanofabrication, Imaging and Characterization Core Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Core Labs; Photonics Laboratory
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
8th International Conference on High-capacity Optical Networks and Emerging Technologies
Conference/Event name:
8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011
Issue Date:
Dec-2011
DOI:
10.1109/HONET.2011.6149817
Type:
Conference Paper
ISBN:
9781457711695
Appears in Collections:
Conference Papers; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorElafandy, Rami T.en
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorYang, Yangen
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorZhang, Beien
dc.contributor.authorZhao, L. J.en
dc.contributor.authorZhang, Mengen
dc.contributor.authorBhattacharya, Pallab K.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-08-04T07:01:36Zen
dc.date.available2015-08-04T07:01:36Zen
dc.date.issued2011-12en
dc.identifier.isbn9781457711695en
dc.identifier.doi10.1109/HONET.2011.6149817en
dc.identifier.urihttp://hdl.handle.net/10754/564461en
dc.description.abstractComparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectInGaN polar quantum dotsen
dc.subjectinternal quantum efficiencyen
dc.subjectquantum confined stark effecten
dc.subjecttemperature dependent photoluminescenceen
dc.subjectwetting layeren
dc.titleOptical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dotsen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentCore Labsen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journal8th International Conference on High-capacity Optical Networks and Emerging Technologiesen
dc.conference.date19 December 2011 through 21 December 2011en
dc.conference.name8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011en
dc.conference.locationRiyadhen
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, University of Michigan, MI 48109-2122, United Statesen
kaust.authorNg, Tien Kheeen
kaust.authorYang, Yangen
kaust.authorCha, Dong Kyuen
kaust.authorZhang, Beien
kaust.authorOoi, Boon S.en
kaust.authorElafandy, Rami T.en
kaust.authorZhao, L. J.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.