In-situ TEM characterization of nanomaterials and devices

Handle URI:
http://hdl.handle.net/10754/564442
Title:
In-situ TEM characterization of nanomaterials and devices
Authors:
Kim, Moon; Park, Seongyong; Cha, Dong Kyu; Kim, Jiyoung; Floresca, Herman Carlo; Lu, Ning; Wang, Jinguo
Abstract:
Electrical properties of nano size devices were directly measured by TEM. Real time observation of phase transition behavior in PRAM revealed that the volume of the crystalline phase is the main factor in determining cell resistance. In the transistor device, we have identified the doping type and area by measuring the I-V curve at the individual nano contact on the specimen. The evolution of the graphene edge structure was controlled and monitored at and up to 1200°C in-situ. © 2011 IEEE.
KAUST Department:
Core Labs
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2011 IEEE Nanotechnology Materials and Devices Conference
Conference/Event name:
2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Issue Date:
Oct-2011
DOI:
10.1109/NMDC.2011.6155318
Type:
Conference Paper
ISBN:
9781457721397
Appears in Collections:
Conference Papers

Full metadata record

DC FieldValue Language
dc.contributor.authorKim, Moonen
dc.contributor.authorPark, Seongyongen
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorKim, Jiyoungen
dc.contributor.authorFloresca, Herman Carloen
dc.contributor.authorLu, Ningen
dc.contributor.authorWang, Jinguoen
dc.date.accessioned2015-08-04T07:01:06Zen
dc.date.available2015-08-04T07:01:06Zen
dc.date.issued2011-10en
dc.identifier.isbn9781457721397en
dc.identifier.doi10.1109/NMDC.2011.6155318en
dc.identifier.urihttp://hdl.handle.net/10754/564442en
dc.description.abstractElectrical properties of nano size devices were directly measured by TEM. Real time observation of phase transition behavior in PRAM revealed that the volume of the crystalline phase is the main factor in determining cell resistance. In the transistor device, we have identified the doping type and area by measuring the I-V curve at the individual nano contact on the specimen. The evolution of the graphene edge structure was controlled and monitored at and up to 1200°C in-situ. © 2011 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.titleIn-situ TEM characterization of nanomaterials and devicesen
dc.typeConference Paperen
dc.contributor.departmentCore Labsen
dc.identifier.journal2011 IEEE Nanotechnology Materials and Devices Conferenceen
dc.conference.date18 October 2011 through 21 October 2011en
dc.conference.name2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011en
dc.conference.locationJejuen
dc.contributor.institutionUniversity of Texas at Dallas, Richardson, TX 75080, United Statesen
dc.contributor.institutionSamsung Electronics Co., Hwasung-City, Geyongggi-Do, 445-701, South Koreaen
kaust.authorCha, Dong Kyuen
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