Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

Handle URI:
http://hdl.handle.net/10754/564439
Title:
Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions
Authors:
Useinov, Arthur; Kosel, Jürgen ( 0000-0002-8998-8275 )
Abstract:
Spin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) in magnetic tunnel junctions. In this paper, we study the value of the TMR as a function of the applied voltage Va in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental TMR-Va curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical TMR-V a data are in good agreement with experimental ones. © 2011 IEEE.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Sensing, Magnetism and Microsystems Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Transactions on Magnetics
Issue Date:
Oct-2011
DOI:
10.1109/TMAG.2011.2153182
Type:
Article
ISSN:
00189464
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Sensing, Magnetism and Microsystems Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorUseinov, Arthuren
dc.contributor.authorKosel, Jürgenen
dc.date.accessioned2015-08-04T07:01:01Zen
dc.date.available2015-08-04T07:01:01Zen
dc.date.issued2011-10en
dc.identifier.issn00189464en
dc.identifier.doi10.1109/TMAG.2011.2153182en
dc.identifier.urihttp://hdl.handle.net/10754/564439en
dc.description.abstractSpin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) in magnetic tunnel junctions. In this paper, we study the value of the TMR as a function of the applied voltage Va in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental TMR-Va curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical TMR-V a data are in good agreement with experimental ones. © 2011 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectBallistic transporten
dc.subjectmagnetic tunnel junctionen
dc.subjectspin polarized transporten
dc.subjecttunnel magnetoresistanceen
dc.titleSpin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctionsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSensing, Magnetism and Microsystems Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalIEEE Transactions on Magneticsen
kaust.authorUseinov, Arthuren
kaust.authorKosel, Jürgenen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.