Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

Handle URI:
http://hdl.handle.net/10754/564436
Title:
Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions
Authors:
Manchon, Aurelien ( 0000-0002-4768-293X )
Abstract:
Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Spintronics Theory Group
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Transactions on Magnetics
Issue Date:
Oct-2011
DOI:
10.1109/TMAG.2011.2157108
ARXIV:
arXiv:1110.3491
Type:
Article
ISSN:
00189464
Additional Links:
http://arxiv.org/abs/arXiv:1110.3491v1
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Spintronics Theory Group; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorManchon, Aurelienen
dc.date.accessioned2015-08-04T07:00:55Zen
dc.date.available2015-08-04T07:00:55Zen
dc.date.issued2011-10en
dc.identifier.issn00189464en
dc.identifier.doi10.1109/TMAG.2011.2157108en
dc.identifier.urihttp://hdl.handle.net/10754/564436en
dc.description.abstractNonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://arxiv.org/abs/arXiv:1110.3491v1en
dc.subjectMagnetic tunnel junctionsen
dc.subjectmagnetization switchingen
dc.subjectspin transfer torqueen
dc.subjectspin-orbit couplingen
dc.titleVoltage-driven versus current-driven spin torque in anisotropic tunneling junctionsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSpintronics Theory Groupen
dc.identifier.journalIEEE Transactions on Magneticsen
dc.identifier.arxividarXiv:1110.3491en
kaust.authorManchon, Aurelienen
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