Theoretical observation of two state lasing from InAs/InP quantum-dash lasers

Handle URI:
http://hdl.handle.net/10754/564422
Title:
Theoretical observation of two state lasing from InAs/InP quantum-dash lasers
Authors:
Khan, Mohammed Zahed Mustafa ( 0000-0002-9734-5413 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
The effect of cavity length on the lasing wavelength of InAs/InP quantum dash (Qdash) laser is examined using the carrier-photon rate equation model including the carrier relaxation process from the Qdash ground state and excited state. Both, homogeneous and inhomogeneous broadening has been incorporated in the model. We show that ground state lasing occurs with longer cavity lasers and excited state lasing occurs from relatively short cavity lasers. © 2011 IEEE.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Materials Science and Engineering Program; Electrical Engineering Program; Computational Physics and Materials Science (CPMS); Photonics Laboratory
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2011 Numerical Simulation of Optoelectronic Devices
Conference/Event name:
11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011
Issue Date:
Sep-2011
DOI:
10.1109/NUSOD.2011.6041186
Type:
Conference Paper
ISSN:
21583234
ISBN:
9781612848785
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Materials Science and Engineering Program; Photonics Laboratory; Computational Physics and Materials Science (CPMS); Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorKhan, Mohammed Zahed Mustafaen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-08-04T06:27:06Zen
dc.date.available2015-08-04T06:27:06Zen
dc.date.issued2011-09en
dc.identifier.isbn9781612848785en
dc.identifier.issn21583234en
dc.identifier.doi10.1109/NUSOD.2011.6041186en
dc.identifier.urihttp://hdl.handle.net/10754/564422en
dc.description.abstractThe effect of cavity length on the lasing wavelength of InAs/InP quantum dash (Qdash) laser is examined using the carrier-photon rate equation model including the carrier relaxation process from the Qdash ground state and excited state. Both, homogeneous and inhomogeneous broadening has been incorporated in the model. We show that ground state lasing occurs with longer cavity lasers and excited state lasing occurs from relatively short cavity lasers. © 2011 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.titleTheoretical observation of two state lasing from InAs/InP quantum-dash lasersen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journal2011 Numerical Simulation of Optoelectronic Devicesen
dc.conference.date5 September 2011 through 8 September 2011en
dc.conference.name11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011en
dc.conference.locationRomeen
kaust.authorKhan, Mohammed Zahed Mustafaen
kaust.authorNg, Tien Kheeen
kaust.authorSchwingenschlögl, Udoen
kaust.authorOoi, Boon S.en
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