Resonant tunnel magnetoresistance in a double magnetic tunnel junction

Handle URI:
http://hdl.handle.net/10754/564418
Title:
Resonant tunnel magnetoresistance in a double magnetic tunnel junction
Authors:
Useinov, Arthur; Useinov, Niazbeck Kh H; Tagirov, Lenar R.; Kosel, Jürgen ( 0000-0002-8998-8275 )
Abstract:
We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Sensing, Magnetism and Microsystems Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program
Publisher:
Springer Nature
Journal:
Journal of Superconductivity and Novel Magnetism
Issue Date:
9-Aug-2011
DOI:
10.1007/s10948-011-1221-6
Type:
Article
ISSN:
15571939
Sponsors:
The work was supported in part by the Ministry of Education and Science of Russian Federation, and the bilateral program RFBR (Project No. 10-02-91225-CT_a)-TUBITAK (No. 209T061).
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Sensing, Magnetism and Microsystems Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorUseinov, Arthuren
dc.contributor.authorUseinov, Niazbeck Kh Hen
dc.contributor.authorTagirov, Lenar R.en
dc.contributor.authorKosel, Jürgenen
dc.date.accessioned2015-08-04T06:26:57Zen
dc.date.available2015-08-04T06:26:57Zen
dc.date.issued2011-08-09en
dc.identifier.issn15571939en
dc.identifier.doi10.1007/s10948-011-1221-6en
dc.identifier.urihttp://hdl.handle.net/10754/564418en
dc.description.abstractWe present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.en
dc.description.sponsorshipThe work was supported in part by the Ministry of Education and Science of Russian Federation, and the bilateral program RFBR (Project No. 10-02-91225-CT_a)-TUBITAK (No. 209T061).en
dc.publisherSpringer Natureen
dc.subjectMagnetic tunnel junctionen
dc.subjectSpin-dependent currenten
dc.subjectTMRen
dc.subjectTunnel magnetoresistanceen
dc.titleResonant tunnel magnetoresistance in a double magnetic tunnel junctionen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSensing, Magnetism and Microsystems Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalJournal of Superconductivity and Novel Magnetismen
dc.contributor.institutionSolid State Physics Department, Kazan State University, 420008, Kazan, Russian Federationen
kaust.authorUseinov, Arthuren
kaust.authorKosel, Jürgenen
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