Finite element analysis on the influence of contact resistivity in an extraordinary magnetoresistance magnetic field micro sensor

Handle URI:
http://hdl.handle.net/10754/564417
Title:
Finite element analysis on the influence of contact resistivity in an extraordinary magnetoresistance magnetic field micro sensor
Authors:
Sun, Jian; Kosel, Jürgen ( 0000-0002-8998-8275 )
Abstract:
In this paper, an extraordinary magnetoresistance (EMR) device made of an InSb/Au hybrid structure was investigated. Those devices have a large potential in becoming a new generation of highly sensitive and cheap magnetic micro sensors. A crucial factor for the performance is the interface between the InSb and Au, which suffers from a certain contact resistivity. The Finite Element Method (FEM) was employed to simulate the current redistribution in the device, under an applied magnetic field. Specifically, the influence of the contact resistivity between the InSb bulk and Au shunt was studied. In a device with optimized geometry and without contact resistivity between the layers of InSb and Au, the EMR effect and the sensitivity show values of 1.89 × 104% and 0.02%/(10-4 T), respectively, at 1 Tesla. For values of contact resistivity up to 10-8cm2 the EMR effect is almost constant, while for higher values the EMR effect decreases exponentially. However, the sensitivity of the device does not decrease until 5 × 10-6 cm2 of contact resistivity. Only beyond this value the sensitivity, which in most cases is associated with the performance of the device, will deteriorate. © Springer Science+Business Media, LLC 2011.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Sensing, Magnetism and Microsystems Lab
Publisher:
Springer Nature
Journal:
Journal of Superconductivity and Novel Magnetism
Issue Date:
6-Aug-2011
DOI:
10.1007/s10948-011-1256-8
Type:
Article
ISSN:
15571939
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Sensing, Magnetism and Microsystems Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSun, Jianen
dc.contributor.authorKosel, Jürgenen
dc.date.accessioned2015-08-04T06:26:55Zen
dc.date.available2015-08-04T06:26:55Zen
dc.date.issued2011-08-06en
dc.identifier.issn15571939en
dc.identifier.doi10.1007/s10948-011-1256-8en
dc.identifier.urihttp://hdl.handle.net/10754/564417en
dc.description.abstractIn this paper, an extraordinary magnetoresistance (EMR) device made of an InSb/Au hybrid structure was investigated. Those devices have a large potential in becoming a new generation of highly sensitive and cheap magnetic micro sensors. A crucial factor for the performance is the interface between the InSb and Au, which suffers from a certain contact resistivity. The Finite Element Method (FEM) was employed to simulate the current redistribution in the device, under an applied magnetic field. Specifically, the influence of the contact resistivity between the InSb bulk and Au shunt was studied. In a device with optimized geometry and without contact resistivity between the layers of InSb and Au, the EMR effect and the sensitivity show values of 1.89 × 104% and 0.02%/(10-4 T), respectively, at 1 Tesla. For values of contact resistivity up to 10-8cm2 the EMR effect is almost constant, while for higher values the EMR effect decreases exponentially. However, the sensitivity of the device does not decrease until 5 × 10-6 cm2 of contact resistivity. Only beyond this value the sensitivity, which in most cases is associated with the performance of the device, will deteriorate. © Springer Science+Business Media, LLC 2011.en
dc.publisherSpringer Natureen
dc.subjectContact resistivityen
dc.subjectExtraordinary magnetoresistanceen
dc.subjectFEMen
dc.subjectMagnetic sensoren
dc.subjectMagnetoresistanceen
dc.titleFinite element analysis on the influence of contact resistivity in an extraordinary magnetoresistance magnetic field micro sensoren
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentSensing, Magnetism and Microsystems Laben
dc.identifier.journalJournal of Superconductivity and Novel Magnetismen
kaust.authorSun, Jianen
kaust.authorKosel, Jürgenen
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