Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks

Handle URI:
http://hdl.handle.net/10754/564395
Title:
Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks
Authors:
Mitrovic, Ivona Z.; Simutis, G.; Davey, W. M.; Sedghi, Naser; Hall, Stephen D.; Dhanak, Vinod R.; Alexandrou, Ioannis; Wang, Qingxiao; Lopes, Joao Marcelo J.; Schubert, Jürgen M.
Abstract:
TiN/LaLuO3 (LLO) gate stacks formed by molecular beam deposition have been investigated by X-ray photoelectron spectroscopy, medium energy ion scattering, spectroscopic ellipsometry, scanning transmission electron microscopy, electron energy loss spectroscopy and atomic force microscopy. The results indicate an amorphous structure for deposited LLO films. The band offset between the Fermi level of TiN and valence band of LLO is estimated to be 2.65 ± 0.05 eV. A weaker La-O-Lu bond and a prominent Ti2p sub-peak which relates to Ti bond to interstitial oxygen have been identified for an ultra-thin 1.7 nm TiN/3 nm LLO gate stack. The angle-dependent XPS analysis of Si2s spectra as well as shifts of La4d, La3d and Lu4d core levels suggests a silicate-type with Si-rich SiOx LLO/Si interface. Symmetrical valence and conduction band offsets for LLO to Si of 2.2 eV and the bandgap of 5.5 ± 0.1 eV have been derived from the measurements. The band alignment for ultra-thin TiN/LLO gate stack is affected by structural changes. Copyright © 2011 Published by Elsevier B.V. All rights reserved.
KAUST Department:
Core Labs
Publisher:
Elsevier BV
Journal:
Microelectronic Engineering
Conference/Event name:
17th Biennial International Insulating Films on Semiconductor Conference
Issue Date:
Jul-2011
DOI:
10.1016/j.mee.2011.03.051
Type:
Conference Paper
ISSN:
01679317
Appears in Collections:
Conference Papers

Full metadata record

DC FieldValue Language
dc.contributor.authorMitrovic, Ivona Z.en
dc.contributor.authorSimutis, G.en
dc.contributor.authorDavey, W. M.en
dc.contributor.authorSedghi, Naseren
dc.contributor.authorHall, Stephen D.en
dc.contributor.authorDhanak, Vinod R.en
dc.contributor.authorAlexandrou, Ioannisen
dc.contributor.authorWang, Qingxiaoen
dc.contributor.authorLopes, Joao Marcelo J.en
dc.contributor.authorSchubert, Jürgen M.en
dc.date.accessioned2015-08-04T06:26:05Zen
dc.date.available2015-08-04T06:26:05Zen
dc.date.issued2011-07en
dc.identifier.issn01679317en
dc.identifier.doi10.1016/j.mee.2011.03.051en
dc.identifier.urihttp://hdl.handle.net/10754/564395en
dc.description.abstractTiN/LaLuO3 (LLO) gate stacks formed by molecular beam deposition have been investigated by X-ray photoelectron spectroscopy, medium energy ion scattering, spectroscopic ellipsometry, scanning transmission electron microscopy, electron energy loss spectroscopy and atomic force microscopy. The results indicate an amorphous structure for deposited LLO films. The band offset between the Fermi level of TiN and valence band of LLO is estimated to be 2.65 ± 0.05 eV. A weaker La-O-Lu bond and a prominent Ti2p sub-peak which relates to Ti bond to interstitial oxygen have been identified for an ultra-thin 1.7 nm TiN/3 nm LLO gate stack. The angle-dependent XPS analysis of Si2s spectra as well as shifts of La4d, La3d and Lu4d core levels suggests a silicate-type with Si-rich SiOx LLO/Si interface. Symmetrical valence and conduction band offsets for LLO to Si of 2.2 eV and the bandgap of 5.5 ± 0.1 eV have been derived from the measurements. The band alignment for ultra-thin TiN/LLO gate stack is affected by structural changes. Copyright © 2011 Published by Elsevier B.V. All rights reserved.en
dc.publisherElsevier BVen
dc.subjectBandgapen
dc.subjectInterfacial layeren
dc.subjectLaLuO3en
dc.subjectTiNen
dc.subjectValence banden
dc.titleStudy of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacksen
dc.typeConference Paperen
dc.contributor.departmentCore Labsen
dc.identifier.journalMicroelectronic Engineeringen
dc.conference.date21–24 June 2011en
dc.conference.name17th Biennial International Insulating Films on Semiconductor Conferenceen
dc.conference.locationGrenoble, Franceen
dc.contributor.institutionUniversity of Liverpool, Department of Electrical Engineering and Electronics, Brownlow Hill, Liverpool L69 3GJ, United Kingdomen
dc.contributor.institutionUniversity of Liverpool, Department of Physics, Brownlow Hill, Liverpool L69 7ZD, United Kingdomen
dc.contributor.institutionNanoPort FEI COMPANY, Building AAE-III-0-075, Achtseweg-noord 5, 5651 GG Eindhoven, Netherlandsen
dc.contributor.institutionPeter Grunberg Institute PGI-9, JARAFIT, Research Centre Julich, D-52425 Julich, Germanyen
kaust.authorWang, Qingxiaoen
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