Multi states electromechanical switch for energy efficient parallel data processing

Handle URI:
http://hdl.handle.net/10754/564368
Title:
Multi states electromechanical switch for energy efficient parallel data processing
Authors:
Kloub, Hussam; Smith, Casey; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
We present a design, simulation results and fabrication of electromechanical switches enabling parallel data processing and multi functionality. The device is applied in logic gates AND, NOR, XNOR, and Flip-Flops. The device footprint size is 2μm by 0.5μm, and has a pull-in voltage of 5.15V which is verified by FEM simulation. © 2011 IEEE.
KAUST Department:
Electrical Engineering Program; Integrated Nanotechnology Lab; Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2011 Saudi International Electronics, Communications and Photonics Conference (SIECPC)
Conference/Event name:
Saudi International Electronics, Communications and Photonics Conference 2011, SIECPC 2011
Issue Date:
Apr-2011
DOI:
10.1109/SIECPC.2011.5877014
Type:
Conference Paper
ISBN:
9781457700699
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorKloub, Hussamen
dc.contributor.authorSmith, Caseyen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-04T06:25:10Zen
dc.date.available2015-08-04T06:25:10Zen
dc.date.issued2011-04en
dc.identifier.isbn9781457700699en
dc.identifier.doi10.1109/SIECPC.2011.5877014en
dc.identifier.urihttp://hdl.handle.net/10754/564368en
dc.description.abstractWe present a design, simulation results and fabrication of electromechanical switches enabling parallel data processing and multi functionality. The device is applied in logic gates AND, NOR, XNOR, and Flip-Flops. The device footprint size is 2μm by 0.5μm, and has a pull-in voltage of 5.15V which is verified by FEM simulation. © 2011 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectdigital logic designen
dc.subjectMulti states switchen
dc.subjectmultiple-valued logic designen
dc.subjectnano electromechanical switchen
dc.subjectparallel data processingen
dc.titleMulti states electromechanical switch for energy efficient parallel data processingen
dc.typeConference Paperen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journal2011 Saudi International Electronics, Communications and Photonics Conference (SIECPC)en
dc.conference.date23 April 2011 through 26 April 2011en
dc.conference.nameSaudi International Electronics, Communications and Photonics Conference 2011, SIECPC 2011en
dc.conference.locationRiyadhen
kaust.authorKloub, Hussamen
kaust.authorSmith, Caseyen
kaust.authorHussain, Muhammad Mustafaen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.