Impact of scaling on the performance and reliability degradation of metal-contacts in NEMS devices

Handle URI:
http://hdl.handle.net/10754/564367
Title:
Impact of scaling on the performance and reliability degradation of metal-contacts in NEMS devices
Authors:
Dadgour, Hamed F.; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 ) ; Cassell, Alan M.; Singh, Navab R.; Banerjee, Kaustav
Abstract:
Nano-electro-mechanical switches (NEMS) offer new possibilities for the design of ultra energy-efficient systems; however, thus far, all the fabricated NEMS devices require high supply voltages that limit their applicability for logic designs. Therefore, research is being conducted to lower the operating voltages by scaling down the physical dimensions of these devices. However, the impact of device scaling on the electrical and mechanical properties of metal contacts in NEMS devices has not been thoroughly investigated in the literature. Such a study is essential because metal contacts play a critical role in determining the overall performance and reliability of NEMS. Therefore, the comprehensive analytical study presented in this paper highlights the performance and reliability degradations of such metal contacts caused by scaling. The proposed modeling environment accurately takes into account the impact of roughness of contact surfaces, elastic/plastic deformation of contacting asperities, and various inter-molecular forces between mating surfaces (such as Van der Waals and capillary forces). The modeling results are validated and calibrated using available measurement data. This scaling analysis indicates that the key contact properties of gold contacts (resistance, stiction and wear-out) deteriorate "exponentially" with scaling. Simulation results demonstrate that reliable (stiction-free) operation of very small contact areas (≈ 6nm x 6nm) will be a daunting task due to the existence of strong surface forces. Hence, contact degradation is identified as a major problem to the scaling of NEMS transistors. © 2011 IEEE.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Integrated Nanotechnology Lab
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2011 International Reliability Physics Symposium
Conference/Event name:
49th International Reliability Physics Symposium, IRPS 2011
Issue Date:
Apr-2011
DOI:
10.1109/IRPS.2011.5784489
Type:
Conference Paper
ISSN:
15417026
ISBN:
9781424491117
Appears in Collections:
Conference Papers; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorDadgour, Hamed F.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.contributor.authorCassell, Alan M.en
dc.contributor.authorSingh, Navab R.en
dc.contributor.authorBanerjee, Kaustaven
dc.date.accessioned2015-08-04T06:25:08Zen
dc.date.available2015-08-04T06:25:08Zen
dc.date.issued2011-04en
dc.identifier.isbn9781424491117en
dc.identifier.issn15417026en
dc.identifier.doi10.1109/IRPS.2011.5784489en
dc.identifier.urihttp://hdl.handle.net/10754/564367en
dc.description.abstractNano-electro-mechanical switches (NEMS) offer new possibilities for the design of ultra energy-efficient systems; however, thus far, all the fabricated NEMS devices require high supply voltages that limit their applicability for logic designs. Therefore, research is being conducted to lower the operating voltages by scaling down the physical dimensions of these devices. However, the impact of device scaling on the electrical and mechanical properties of metal contacts in NEMS devices has not been thoroughly investigated in the literature. Such a study is essential because metal contacts play a critical role in determining the overall performance and reliability of NEMS. Therefore, the comprehensive analytical study presented in this paper highlights the performance and reliability degradations of such metal contacts caused by scaling. The proposed modeling environment accurately takes into account the impact of roughness of contact surfaces, elastic/plastic deformation of contacting asperities, and various inter-molecular forces between mating surfaces (such as Van der Waals and capillary forces). The modeling results are validated and calibrated using available measurement data. This scaling analysis indicates that the key contact properties of gold contacts (resistance, stiction and wear-out) deteriorate "exponentially" with scaling. Simulation results demonstrate that reliable (stiction-free) operation of very small contact areas (≈ 6nm x 6nm) will be a daunting task due to the existence of strong surface forces. Hence, contact degradation is identified as a major problem to the scaling of NEMS transistors. © 2011 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectContact Degradationen
dc.subjectContact Reliabilityen
dc.subjectContact Resistanceen
dc.subjectDigital Circuitsen
dc.subjectNano-electro-mechanical Switches (NEMS)en
dc.subjectProcess Variationsen
dc.subjectScaling Analysisen
dc.subjectStictionen
dc.subjectWear and Fatigueen
dc.titleImpact of scaling on the performance and reliability degradation of metal-contacts in NEMS devicesen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.identifier.journal2011 International Reliability Physics Symposiumen
dc.conference.date10 April 2011 through 14 April 2011en
dc.conference.name49th International Reliability Physics Symposium, IRPS 2011en
dc.conference.locationMonterey, CAen
dc.contributor.institutionDepartment of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, United Statesen
dc.contributor.institutionNASA Ames Research Center, Moffett Field, CA 94035, United Statesen
dc.contributor.institutionInstitute of Microelectronics, A STAR, Singapore, 117685, Singaporeen
kaust.authorHussain, Muhammad Mustafaen
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