The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers

Handle URI:
http://hdl.handle.net/10754/564324
Title:
The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers
Authors:
Khan, Mohammed Zahed Mustafa ( 0000-0002-9734-5413 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We present a rate equation model for the analysis of static and dynamic characteristics of InAs/InP quantumdash (Qdash) semiconductor laser. The model is applied to calculate the differential modal gain (DMG) and linewidth enhancement factor (LEF) of the Qdash laser. In addition, the effect of varying the Qdash height on these dynamic parameters is evaluated. The model predicts a decrease in the differential modal gain with increase in the Qdash height while the LEF value generally does not get affected. The LEF and DMG of the Qdash laser at peak gain attain a value of ∼1-1.5 and ∼0.6×10 -15 -1.0×10-15 cm2, respectively. © 2010 IEEE.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Materials Science and Engineering Program; Electrical Engineering Program; Computational Physics and Materials Science (CPMS); Photonics Laboratory
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
7th International Symposium on High-capacity Optical Networks and Enabling Technologies
Conference/Event name:
7th International Symposium on High-Capacity Optical Networks and Enabling Technologies, HONET 2010
Issue Date:
Dec-2010
DOI:
10.1109/HONET.2010.5715755
Type:
Conference Paper
ISBN:
9781424499243
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Materials Science and Engineering Program; Photonics Laboratory; Computational Physics and Materials Science (CPMS); Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorKhan, Mohammed Zahed Mustafaen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-08-04T06:23:43Zen
dc.date.available2015-08-04T06:23:43Zen
dc.date.issued2010-12en
dc.identifier.isbn9781424499243en
dc.identifier.doi10.1109/HONET.2010.5715755en
dc.identifier.urihttp://hdl.handle.net/10754/564324en
dc.description.abstractWe present a rate equation model for the analysis of static and dynamic characteristics of InAs/InP quantumdash (Qdash) semiconductor laser. The model is applied to calculate the differential modal gain (DMG) and linewidth enhancement factor (LEF) of the Qdash laser. In addition, the effect of varying the Qdash height on these dynamic parameters is evaluated. The model predicts a decrease in the differential modal gain with increase in the Qdash height while the LEF value generally does not get affected. The LEF and DMG of the Qdash laser at peak gain attain a value of ∼1-1.5 and ∼0.6×10 -15 -1.0×10-15 cm2, respectively. © 2010 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectDifferential gainen
dc.subjectLEFen
dc.subjectQuantum-dash laseren
dc.subjectRate equationsen
dc.titleThe influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasersen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journal7th International Symposium on High-capacity Optical Networks and Enabling Technologiesen
dc.conference.date19 December 2010 through 21 December 2010en
dc.conference.name7th International Symposium on High-Capacity Optical Networks and Enabling Technologies, HONET 2010en
dc.conference.locationCairoen
kaust.authorKhan, Mohammed Zahed Mustafaen
kaust.authorNg, Tien Kheeen
kaust.authorSchwingenschlögl, Udoen
kaust.authorOoi, Boon S.en
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