Optimization of an extraordinary magnetoresistance sensor in the semiconductor-metal hybrid structure

Handle URI:
http://hdl.handle.net/10754/564316
Title:
Optimization of an extraordinary magnetoresistance sensor in the semiconductor-metal hybrid structure
Authors:
Sun, Jian; Kosel, Jürgen ( 0000-0002-8998-8275 ) ; Gooneratne, Chinthaka Pasan; Soh, Yeongah
Abstract:
The purpose of this paper is to show by numerical computation how geometric parameters influence the Extraordinary Magnetoresistance (EMR) effect in an InAs-Au hybrid device. Symmetric IVVI and VIIV configurations were considered. The results show that the width and the length-width ratio of InAs are important geometrical parameters for the EMR effect along with the placement of the leads. Approximately the same EMR effect was obtained for both IVVI and VIIV configurations when the applied magnetic field ranged from -1T to 1T. In an optimized geometry the EMR effect can reach 43000% at 1Tesla for IVVI and 42700% at 1 Tesla for the VIIV configuration. ©2010 IEEE.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Sensing, Magnetism and Microsystems Lab
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2010 IEEE Sensors
Conference/Event name:
9th IEEE Sensors Conference 2010, SENSORS 2010
Issue Date:
Nov-2010
DOI:
10.1109/ICSENS.2010.5690566
Type:
Conference Paper
ISBN:
9781424481682
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Sensing, Magnetism and Microsystems Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSun, Jianen
dc.contributor.authorKosel, Jürgenen
dc.contributor.authorGooneratne, Chinthaka Pasanen
dc.contributor.authorSoh, Yeongahen
dc.date.accessioned2015-08-04T06:23:21Zen
dc.date.available2015-08-04T06:23:21Zen
dc.date.issued2010-11en
dc.identifier.isbn9781424481682en
dc.identifier.doi10.1109/ICSENS.2010.5690566en
dc.identifier.urihttp://hdl.handle.net/10754/564316en
dc.description.abstractThe purpose of this paper is to show by numerical computation how geometric parameters influence the Extraordinary Magnetoresistance (EMR) effect in an InAs-Au hybrid device. Symmetric IVVI and VIIV configurations were considered. The results show that the width and the length-width ratio of InAs are important geometrical parameters for the EMR effect along with the placement of the leads. Approximately the same EMR effect was obtained for both IVVI and VIIV configurations when the applied magnetic field ranged from -1T to 1T. In an optimized geometry the EMR effect can reach 43000% at 1Tesla for IVVI and 42700% at 1 Tesla for the VIIV configuration. ©2010 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.titleOptimization of an extraordinary magnetoresistance sensor in the semiconductor-metal hybrid structureen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentSensing, Magnetism and Microsystems Laben
dc.identifier.journal2010 IEEE Sensorsen
dc.conference.date1 November 2010 through 4 November 2010en
dc.conference.name9th IEEE Sensors Conference 2010, SENSORS 2010en
dc.conference.locationWaikoloa, HIen
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2AZ, United Kingdomen
kaust.authorSun, Jianen
kaust.authorKosel, Jürgenen
kaust.authorGooneratne, Chinthaka Pasanen
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