Quantitative strain analysis for advanced CMOS technology by Nano Beam Diffraction

Handle URI:
http://hdl.handle.net/10754/564288
Title:
Quantitative strain analysis for advanced CMOS technology by Nano Beam Diffraction
Authors:
Wang, Qingxiao; Zhu, Jinmin; Du, Anyan; Liu, Jinping; Hua, YouNan
Abstract:
Nano Beam Diffraction has been used to analyze the local strain distribution in MOS transistors. The influence of wafer process on the channel strain has been systematically analyzed in this paper. The source/drain implantation can cause a little strain loss but the silicidation step is the key process in which dramatic strain loss has been found. © 2010 IEEE.
KAUST Department:
Core Labs
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
Conference/Event name:
17th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2010
Issue Date:
Jul-2010
DOI:
10.1109/IPFA.2010.5531984
Type:
Conference Paper
ISBN:
9781424455973
Appears in Collections:
Conference Papers

Full metadata record

DC FieldValue Language
dc.contributor.authorWang, Qingxiaoen
dc.contributor.authorZhu, Jinminen
dc.contributor.authorDu, Anyanen
dc.contributor.authorLiu, Jinpingen
dc.contributor.authorHua, YouNanen
dc.date.accessioned2015-08-04T06:22:18Zen
dc.date.available2015-08-04T06:22:18Zen
dc.date.issued2010-07en
dc.identifier.isbn9781424455973en
dc.identifier.doi10.1109/IPFA.2010.5531984en
dc.identifier.urihttp://hdl.handle.net/10754/564288en
dc.description.abstractNano Beam Diffraction has been used to analyze the local strain distribution in MOS transistors. The influence of wafer process on the channel strain has been systematically analyzed in this paper. The source/drain implantation can cause a little strain loss but the silicidation step is the key process in which dramatic strain loss has been found. © 2010 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.titleQuantitative strain analysis for advanced CMOS technology by Nano Beam Diffractionen
dc.typeConference Paperen
dc.contributor.departmentCore Labsen
dc.identifier.journal2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuitsen
dc.conference.date5 July 2010 through 9 July 2010en
dc.conference.name17th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2010en
dc.conference.locationSingaporeen
dc.contributor.institutionGLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore, 738406, Singaporeen
kaust.authorWang, Qingxiaoen
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